X28C513J-12

Rochester Electronics X28C513J-12

Part No:

X28C513J-12

Datasheet:

-

Package:

-

AINNX NO:

28973139-X28C513J-12

Category:

Memory

Description:

EEPROM, 64KX8, 120ns, Parallel, CMOS, PQCC32, PLASTIC, LCC-32

Products specifications
  • Surface Mount

    having leads that are designed to be soldered on the side of a circuit board that the body of the component is mounted on.

    YES
  • Number of Terminals
    32
  • Package Description
    QCCJ,
  • Package Style
    CHIP CARRIER
  • Number of Words Code
    64000
  • Package Body Material
    PLASTIC/EPOXY
  • Access Time-Max
    120 ns
  • Operating Temperature-Max
    70 °C
  • Manufacturer Part Number
    X28C513J-12
  • Number of Words
    65536 words
  • Supply Voltage-Nom (Vsup)
    5 V
  • Package Code
    QCCJ
  • Package Shape
    RECTANGULAR
  • Manufacturer
    Rochester Electronics LLC
  • Part Life Cycle Code
    Active
  • Ihs Manufacturer
    ROCHESTER ELECTRONICS LLC
  • Risk Rank
    5.7
  • Technology
    CMOS
  • Terminal Position
    QUAD
  • Terminal Form

    Occurring at or forming the end of a series, succession, or the like; closing; concluding.

    J BEND
  • Number of Functions
    1
  • Terminal Pitch

    The center distance from one pole to the next.

    1.27 mm
  • Reach Compliance Code
    unknown
  • JESD-30 Code
    R-PQCC-J32
  • Supply Voltage-Max (Vsup)
    5.5 V
  • Temperature Grade

    Temperature grades represent a tire's resistance to heat and its ability to dissipate heat when tested under controlled laboratory test conditions.

    COMMERCIAL
  • Supply Voltage-Min (Vsup)
    4.5 V
  • Operating Mode

    A phase of operation during the operation and maintenance stages of the life cycle of a facility.

    ASYNCHRONOUS
  • Organization
    64KX8
  • Seated Height-Max
    3.56 mm
  • Memory Width
    8
  • Memory Density
    524288 bit
  • Parallel/Serial
    PARALLEL
  • Memory IC Type
    EEPROM
  • Programming Voltage

    A special high-voltage supply that supplies the potential and energy for altering the state of certain nonvolatile memory arrays. On some devices, the presence of VPP also acts as a program enable signal (P).

    5 V
  • Write Cycle Time-Max (tWC)
    10 ms
  • Width
    11.43 mm
  • Length
    13.97 mm
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