RGS00TS65EHRC11

Rohm Semiconductor RGS00TS65EHRC11

Part No:

RGS00TS65EHRC11

Manufacturer:

Rohm Semiconductor

Datasheet:

-

Package:

TO-247-3

AINNX NO:

28666838-RGS00TS65EHRC11

Description:

8US SHORT-CIRCUIT TOLERANCE, 650

Products specifications
  • Mounting Type
    Through Hole
  • Package / Case
    TO-247-3
  • Supplier Device Package
    TO-247N
  • Mfr
    Rohm Semiconductor
  • Package
    Tube
  • Product Status
    Active
  • Current-Collector (Ic) (Max)
    88 A
  • Test Conditions
    400V, 50A, 10Ohm, 15V
  • MSL
    MSL 1 - Unlimited
  • Qualification
    AEC-Q101
  • Maximum Gate Emitter Voltage
    - 30 V, + 30 V
  • Pd - Power Dissipation
    326 W
  • Maximum Operating Temperature

    the maximum body temperature at which the thermistor is designed to operate for extended periods of time with acceptable stability of its electrical characteristics.

    + 175 C
  • Minimum Operating Temperature
    - 40 C
  • Factory Pack QuantityFactory Pack Quantity
    450
  • Mounting Styles
    Through Hole
  • Manufacturer
    ROHM Semiconductor
  • Brand
    ROHM Semiconductor
  • RoHS
    Details
  • Collector- Emitter Voltage VCEO Max
    650 V
  • Series
    -
  • Operating Temperature

    The operating temperature is the range of ambient temperature within which a power supply, or any other electrical equipment, operate in. This ranges from a minimum operating temperature, to a peak or maximum operating temperature, outside which, the power supply may fail.

    -40°C ~ 175°C (TJ)
  • Packaging

    Semiconductor package is a carrier / shell used to contain and cover one or more semiconductor components or integrated circuits. The material of the shell can be metal, plastic, glass or ceramic.

    Tube
  • Subcategory
    IGBTs
  • Technology
    Si
  • Configuration
    Single
  • Power Dissipation

    the process by which an electronic or electrical device produces heat (energy loss or waste) as an undesirable derivative of its primary action.

    326W
  • Input Type
    Standard
  • Power - Max
    326 W
  • Product Type

    a group of products which fulfill a similar need for a market segment or market as a whole.

    IGBT Transistors
  • Voltage - Collector Emitter Breakdown (Max)
    650 V
  • Vce(on) (Max) @ Vge, Ic
    2.1V @ 15V, 50A
  • Continuous Collector Current
    88
  • IGBT Type
    Trench Field Stop
  • Gate Charge

    the amount of charge that needs to be injected into the gate electrode to turn ON (drive) the MOSFET.

    58 nC
  • Current - Collector Pulsed (Icm)
    150 A
  • Td (on/off) @ 25°C
    36ns/115ns
  • Switching Energy
    -
  • Reverse Recovery Time (trr)
    113 ns
  • Product Category

    a particular group of related products.

    IGBT Transistors
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