S-1132B24-I6T2G

Seiko Instruments, Inc. S-1132B24-I6T2G

Part No:

S-1132B24-I6T2G

Datasheet:

-

Package:

-

AINNX NO:

29762451-S-1132B24-I6T2G

Description:

Products specifications
  • Mount
    Surface Mount
  • Number of Pins
    6
  • RoHS
    Compliant
  • Packaging

    Semiconductor package is a carrier / shell used to contain and cover one or more semiconductor components or integrated circuits. The material of the shell can be metal, plastic, glass or ceramic.

    Tape & Reel (TR)
  • Max Operating Temperature

    The Maximum Operating Temperature is the maximum body temperature at which the thermistor is designed to operate for extended periods of time with acceptable stability of its electrical characteristics.

    85 °C
  • Min Operating Temperature
    -40 °C
  • Max Power Dissipation

    The maximum power that the MOSFET can dissipate continuously under the specified thermal conditions.

    500 mW
  • Number of Outputs
    1
  • Output Voltage
    2.4 V
  • Output Type
    Fixed
  • Polarity
    Positive
  • Output Current

    The rated output current is the maximum load current that a power supply can provide at a specified ambient temperature. A power supply can never provide more current that it's rated output current unless there is a fault, such as short circuit at the load.

    300 mA
  • Accuracy
    1 %
  • Number of Regulators

    A regulator is a mechanism or device that controls something such as pressure, temperature, or fluid flow. The voltage regulator keeps the power level stabilized. A regulator is a mechanism or device that controls something such as pressure, temperature, or fluid flow.

    1
  • Min Input Voltage
    2 V
  • Max Input Voltage
    6.5 V
  • Dropout Voltage

    Dropout voltage is the input-to-output differential voltage at which the circuit ceases to regulate against further reductions in input voltage; this point occurs when the input voltage approaches the output voltage.

    150 mV
  • Radiation Hardening

    Radiation hardening is the process of making electronic components and circuits resistant to damage or malfunction caused by high levels of ionizing radiation, especially for environments in outer space (especially beyond the low Earth orbit), around nuclear reactors and particle accelerators, or during nuclear accidents or nuclear warfare.

    No
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