Semelab D2225UK

Package / Case

SOIC-8

Surface Mount

having leads that are designed to be soldered on the side of a circuit board that the body of the component is mounted on.

YES

Number of Terminals

8

Transistor Element Material

SILICON

RoHS

Details

Transistor Polarity

N-Channel

Id - Continuous Drain Current

4 A

Vds - Drain-Source Breakdown Voltage

40 V

Maximum Operating Temperature

the maximum body temperature at which the thermistor is designed to operate for extended periods of time with acceptable stability of its electrical characteristics.

+ 150 C

Mounting Styles

SMD/SMT

Pd - Power Dissipation

17.5 W

Factory Pack QuantityFactory Pack Quantity

50

Vgs - Gate-Source Voltage

20 V

Vgs th - Gate-Source Threshold Voltage

0.5 V to 7 V

Package Description

SMALL OUTLINE, R-XDSO-G8

Package Style

SMALL OUTLINE

Package Body Material

UNSPECIFIED

Reflow Temperature-Max (s)

NOT SPECIFIED

Operating Temperature-Max

200 °C

Rohs Code

Yes

Manufacturer Part Number

D2225UK

Package Shape

RECTANGULAR

Number of Elements

2

Part Life Cycle Code

Active

Ihs Manufacturer

SEMELAB LTD

Risk Rank

5.11

Part Package Code

SOT

Drain Current-Max (ID)

4 A

JESD-609 Code

e4

Pbfree Code

No

ECCN Code

EAR99

Type

RF Power MOSFET

Terminal Finish

GOLD

Additional Feature

Any Feature, including a modified Existing Feature, that is not an Existing Feature.

LOW NOISE

Terminal Position

DUAL

Terminal Form

Occurring at or forming the end of a series, succession, or the like; closing; concluding.

GULL WING

Peak Reflow Temperature (Cel)

NOT SPECIFIED

Reach Compliance Code

compliant

Pin Count

a count of all of the component leads (or pins)

8

JESD-30 Code

R-XDSO-G8

Qualification Status

An indicator of formal certification of qualifications.

Not Qualified

Operating Frequency

Operating frequency is the frequency at which the communications are being made with the total bandwidth occupied by the carrier signal with modulation. Usually bandwidth of the antenna will be wider than the bandwidth of the signal so that more than one center frequency the antenna can be put in to effective use.

1 GHz

Configuration

Dual

Operating Mode

A phase of operation during the operation and maintenance stages of the life cycle of a facility.

ENHANCEMENT MODE

Output Power

That power available at a specified output of a device under specified conditions of operation.

5 W

Transistor Application

AMPLIFIER

Polarity/Channel Type

N-CHANNEL

Transistor Type

DMOS FET

Gain

10 dB

DS Breakdown Voltage-Min

40 V

FET Technology

METAL-OXIDE SEMICONDUCTOR

Highest Frequency Band

ULTRA HIGH FREQUENCY BAND