IRF230

Seme LAB IRF230

Part No:

IRF230

Manufacturer:

Seme LAB

Datasheet:

-

Package:

TO-3

AINNX NO:

33750669-IRF230

Description:

MOSFET POWER

Products specifications
  • Package / Case
    TO-3
  • RoHS
    Non-Compliant
  • Vds - Drain-Source Breakdown Voltage
    200 V
  • Typical Turn-On Delay Time
    35 ns
  • Pd - Power Dissipation
    75 W
  • Transistor Polarity
    N-Channel
  • Maximum Operating Temperature

    the maximum body temperature at which the thermistor is designed to operate for extended periods of time with acceptable stability of its electrical characteristics.

    + 150 C
  • Vgs - Gate-Source Voltage
    - 20 V, + 20 V
  • Minimum Operating Temperature
    - 55 C
  • Factory Pack QuantityFactory Pack Quantity
    10
  • Mounting Styles
    Through Hole
  • Channel Mode
    Enhancement
  • Manufacturer
    TT Electronics
  • Brand
    Semelab / TT Electronics
  • Rds On - Drain-Source Resistance
    400 mOhms
  • Typical Turn-Off Delay Time
    60 ns
  • Id - Continuous Drain Current
    9 A
  • Series
    IRF
  • Subcategory
    MOSFETs
  • Technology
    Si
  • Configuration
    Single
  • Number of Channels
    1 Channel
  • Rise Time

    In electronics, when describing a voltage or current step function, rise time is the time taken by a signal to change from a specified low value to a specified high value.

    80 ns
  • Product Type

    a group of products which fulfill a similar need for a market segment or market as a whole.

    MOSFET
  • Transistor Type
    1 N-Channel
  • Product Category

    a particular group of related products.

    MOSFET
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