BSM150GAL120DN2E3166

Siemens BSM150GAL120DN2E3166

Part No:

BSM150GAL120DN2E3166

Manufacturer:

Siemens

Package:

-

AINNX NO:

69229307-BSM150GAL120DN2E3166

Description:

Description: Insulated Gate Bipolar Transistor, 210A I(C), 1200V V(BR)CES, N-Channel

Products specifications
  • Surface Mount

    having leads that are designed to be soldered on the side of a circuit board that the body of the component is mounted on.

    NO
  • Number of Terminals
    7
  • Transistor Element Material
    SILICON
  • Part Life Cycle Code
    Transferred
  • Ihs Manufacturer
    SIEMENS A G
  • Package Description
    FLANGE MOUNT, R-XUFM-X7
  • Number of Elements
    1
  • Package Body Material
    UNSPECIFIED
  • Package Shape
    RECTANGULAR
  • Package Style
    FLANGE MOUNT
  • Turn-off Time-Nom (toff)
    670 ns
  • Turn-on Time-Nom (ton)
    300 ns
  • ECCN Code
    EAR99
  • Additional Feature

    Any Feature, including a modified Existing Feature, that is not an Existing Feature.

    FAST
  • Terminal Position
    UPPER
  • Terminal Form

    Occurring at or forming the end of a series, succession, or the like; closing; concluding.

    UNSPECIFIED
  • Reach Compliance Code
    unknown
  • JESD-30 Code
    R-XUFM-X7
  • Qualification Status

    An indicator of formal certification of qualifications.

    Not Qualified
  • Configuration
    SINGLE WITH BUILT-IN DIODE
  • Case Connection
    ISOLATED
  • Transistor Application
    GENERAL PURPOSE SWITCHING
  • Polarity/Channel Type
    N-CHANNEL
  • Collector Current-Max (IC)
    210 A
  • Collector-Emitter Voltage-Max
    1200 V
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