STGW25H120F2

STMicroelectronics STGW25H120F2

Part No:

STGW25H120F2

Manufacturer:

STMicroelectronics

Datasheet:

STGW25H120F2

Package:

TO-247-3

ROHS:

AINNX NO:

5841787-STGW25H120F2

Description:

IGBT Transistors IGBT & Power Bipolar

Products specifications
  • Lifecycle Status
    ACTIVE (Last Updated: 8 months ago)
  • Factory Lead Time
    32 Weeks
  • Mount
    Through Hole
  • Mounting Type
    Through Hole
  • Package / Case
    TO-247-3
  • Weight
    38.000013g
  • Transistor Element Material
    SILICON
  • Collector-Emitter Breakdown Voltage
    1.2kV
  • Number of Elements
    1
  • Test Conditions
    600V, 25A, 10 Ω, 15V
  • Operating Temperature

    The operating temperature is the range of ambient temperature within which a power supply, or any other electrical equipment, operate in. This ranges from a minimum operating temperature, to a peak or maximum operating temperature, outside which, the power supply may fail.

    -55°C~175°C TJ
  • Packaging

    Semiconductor package is a carrier / shell used to contain and cover one or more semiconductor components or integrated circuits. The material of the shell can be metal, plastic, glass or ceramic.

    Tube
  • Part Status

    Parts can have many statuses as they progress through the configuration, analysis, review, and approval stages.

    Active
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Number of Terminations
    3
  • ECCN Code
    EAR99
  • Max Power Dissipation

    The maximum power that the MOSFET can dissipate continuously under the specified thermal conditions.

    375W
  • Peak Reflow Temperature (Cel)
    NOT SPECIFIED
  • Time@Peak Reflow Temperature-Max (s)
    NOT SPECIFIED
  • Base Part Number
    STGW25
  • JESD-30 Code
    R-PSFM-T3
  • Element Configuration

    The distribution of electrons of an atom or molecule (or other physical structure) in atomic or molecular orbitals.

    Single
  • Input Type
    Standard
  • Power - Max
    375W
  • Transistor Application
    POWER CONTROL
  • Polarity/Channel Type
    N-CHANNEL
  • Collector Emitter Voltage (VCEO)
    2.6V
  • Max Collector Current
    50A
  • Voltage - Collector Emitter Breakdown (Max)
    1200V
  • Turn On Time

    The time that it takes a gate circuit to allow a current to reach its full value.

    41 ns
  • Vce(on) (Max) @ Vge, Ic
    2.6V @ 15V, 25A
  • Turn Off Time-Nom (toff)
    339 ns
  • IGBT Type
    Trench Field Stop
  • Gate Charge

    the amount of charge that needs to be injected into the gate electrode to turn ON (drive) the MOSFET.

    100nC
  • Current - Collector Pulsed (Icm)
    100A
  • Td (on/off) @ 25°C
    29ns/130ns
  • Switching Energy
    600μJ (on), 700μJ (off)
  • Gate-Emitter Voltage-Max
    20V
  • Gate-Emitter Thr Voltage-Max
    7V
  • RoHS Status

    RoHS means “Restriction of Certain Hazardous Substances” in the “Hazardous Substances Directive” in electrical and electronic equipment.

    ROHS3 Compliant
  • Lead Free
    Lead Free
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