HN4A06J(TE85L,F)

Toshiba Semiconductor and Storage HN4A06J(TE85L,F)

Part No:

HN4A06J(TE85L,F)

Datasheet:

HN4A06J

Package:

SC-74A, SOT-753

ROHS:

AINNX NO:

6268551-HN4A06J(TE85L,F)

Description:

Bipolar Transistors - BJT Trans LFreq -120V PNP PNP -0.1A

Products specifications
  • Mount
    Surface Mount
  • Mounting Type
    Surface Mount
  • Package / Case
    SC-74A, SOT-753
  • Collector-Emitter Breakdown Voltage
    120V
  • hFEMin
    200
  • Operating Temperature

    The operating temperature is the range of ambient temperature within which a power supply, or any other electrical equipment, operate in. This ranges from a minimum operating temperature, to a peak or maximum operating temperature, outside which, the power supply may fail.

    150°C TJ
  • Packaging

    Semiconductor package is a carrier / shell used to contain and cover one or more semiconductor components or integrated circuits. The material of the shell can be metal, plastic, glass or ceramic.

    Cut Tape (CT)
  • Published
    2009
  • Part Status

    Parts can have many statuses as they progress through the configuration, analysis, review, and approval stages.

    Discontinued
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Max Power Dissipation

    The maximum power that the MOSFET can dissipate continuously under the specified thermal conditions.

    300mW
  • Polarity
    PNP
  • Element Configuration

    The distribution of electrons of an atom or molecule (or other physical structure) in atomic or molecular orbitals.

    Dual
  • Power - Max
    300mW
  • Gain Bandwidth Product

    The gain–bandwidth product (designated as GBWP, GBW, GBP, or GB) for an amplifier is the product of the amplifier's bandwidth and the gain at which the bandwidth is measured.

    100MHz
  • Transistor Type
    2 PNP (Dual) Matched Pair, Common Emitter
  • Collector Emitter Voltage (VCEO)
    300mV
  • Max Collector Current
    100mA
  • DC Current Gain (hFE) (Min) @ Ic, Vce
    200 @ 2mA 6V
  • Current - Collector Cutoff (Max)
    100nA ICBO
  • Vce Saturation (Max) @ Ib, Ic
    300mV @ 1mA, 10mA
  • Max Breakdown Voltage
    120V
  • Collector Base Voltage (VCBO)
    -120V
  • Emitter Base Voltage (VEBO)
    -5V
  • RoHS Status

    RoHS means “Restriction of Certain Hazardous Substances” in the “Hazardous Substances Directive” in electrical and electronic equipment.

    RoHS Compliant
0 Similar Products Remaining
Documents & Media Download datasheets and manufacturer documentation for Toshiba Semiconductor and Storage HN4A06J(TE85L,F).