RN2313,LF

Toshiba Semiconductor and Storage RN2313,LF

Part No:

RN2313,LF

Datasheet:

-

Package:

SC-70, SOT-323

AINNX NO:

28802856-RN2313,LF

Description:

PB-F BIAS RESISTOR BUILT-IN TRAN

Products specifications
  • Mounting Type
    Surface Mount
  • Package / Case
    SC-70, SOT-323
  • Supplier Device Package
    SC-70
  • Mfr
    Toshiba Semiconductor and Storage
  • Package
    Tape & Reel (TR)
  • Product Status
    Active
  • Current-Collector (Ic) (Max)
    100 mA
  • Transistor Polarity
    PNP
  • Emitter- Base Voltage VEBO
    5 V
  • Pd - Power Dissipation
    100 mW
  • Maximum Operating Temperature

    the maximum body temperature at which the thermistor is designed to operate for extended periods of time with acceptable stability of its electrical characteristics.

    + 150 C
  • DC Collector/Base Gain hfe Min
    120
  • Unit Weight
    0.000212 oz
  • Typical Input Resistor
    47 kOhms
  • Factory Pack QuantityFactory Pack Quantity
    3000
  • Mounting Styles
    SMD/SMT
  • Peak DC Collector Current
    100 mA
  • Channel Mode
    Enhancement
  • Manufacturer
    Toshiba
  • Brand
    Toshiba
  • Maximum DC Collector Current
    100 mA
  • Maximum Operating Frequency
    200 MHz
  • RoHS
    Details
  • Collector- Emitter Voltage VCEO Max
    50 V
  • Series
    -
  • Packaging

    Semiconductor package is a carrier / shell used to contain and cover one or more semiconductor components or integrated circuits. The material of the shell can be metal, plastic, glass or ceramic.

    Cut Tape
  • Subcategory
    Transistors
  • Configuration
    Single
  • Power - Max
    100 mW
  • Product Type

    a group of products which fulfill a similar need for a market segment or market as a whole.

    BJTs - Bipolar Transistors - Pre-Biased
  • Transistor Type
    PNP - Pre-Biased
  • DC Current Gain (hFE) (Min) @ Ic, Vce
    120 @ 1mA, 5V
  • Current - Collector Cutoff (Max)
    100nA (ICBO)
  • Vce Saturation (Max) @ Ib, Ic
    300mV @ 250μA, 5mA
  • Voltage - Collector Emitter Breakdown (Max)
    50 V
  • Frequency - Transition
    200 MHz
  • Resistor - Base (R1)
    47 kOhms
  • Continuous Collector Current
    100
  • Product Category

    a particular group of related products.

    Bipolar Transistors - Pre-Biased
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