CLY5

TriQuint CLY5

Part No:

CLY5

Manufacturer:

TriQuint

Datasheet:

-

Package:

-

AINNX NO:

32961863-CLY5

Description:

Trans JFET 9V 1.2A 4-Pin(3+Tab) SOT-223

Products specifications
  • Surface Mount

    having leads that are designed to be soldered on the side of a circuit board that the body of the component is mounted on.

    YES
  • Mount
    Surface Mount
  • Number of Pins
    4
  • Weight
    188.014037 mg
  • Number of Terminals
    4
  • Transistor Element Material
    GALLIUM ARSENIDE
  • Package Shape
    RECTANGULAR
  • Package Style
    SMALL OUTLINE
  • Reflow Temperature-Max (s)
    30
  • Package Body Material
    PLASTIC/EPOXY
  • Number of Elements
    1
  • Drain Current-Max (ID)
    1.2 A
  • Risk Rank
    5.34
  • Package Description
    SMALL OUTLINE, R-PDSO-G4
  • Ihs Manufacturer
    QORVO INC
  • Part Life Cycle Code
    Obsolete
  • Rohs Code
    Yes
  • Manufacturer Part Number
    CLY5
  • RoHS
    Compliant
  • ECCN Code
    EAR99
  • Max Operating Temperature

    The Maximum Operating Temperature is the maximum body temperature at which the thermistor is designed to operate for extended periods of time with acceptable stability of its electrical characteristics.

    150 °C
  • Min Operating Temperature
    -55 °C
  • Max Power Dissipation

    The maximum power that the MOSFET can dissipate continuously under the specified thermal conditions.

    2 W
  • Terminal Position
    DUAL
  • Terminal Form

    Occurring at or forming the end of a series, succession, or the like; closing; concluding.

    GULL WING
  • Peak Reflow Temperature (Cel)
    260
  • Reach Compliance Code
    compliant
  • Frequency
    1.8 GHz
  • JESD-30 Code
    R-PDSO-G4
  • Qualification Status

    An indicator of formal certification of qualifications.

    Not Qualified
  • Configuration
    SINGLE
  • Operating Mode

    A phase of operation during the operation and maintenance stages of the life cycle of a facility.

    DEPLETION MODE
  • Case Connection
    SOURCE
  • Transistor Application
    AMPLIFIER
  • Drain to Source Voltage (Vdss)
    9 V
  • Polarity/Channel Type
    N-CHANNEL
  • Continuous Drain Current (ID)
    1.2 A
  • Gate to Source Voltage (Vgs)
    -6 V
  • Gain
    9.5 dB
  • DS Breakdown Voltage-Min
    9 V
  • FET Technology
    JUNCTION
  • Highest Frequency Band
    S BAND
  • Power Gain-Min (Gp)
    9 dB
  • Radiation Hardening

    Radiation hardening is the process of making electronic components and circuits resistant to damage or malfunction caused by high levels of ionizing radiation, especially for environments in outer space (especially beyond the low Earth orbit), around nuclear reactors and particle accelerators, or during nuclear accidents or nuclear warfare.

    No
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