UT2302L-AE3-R

Unisonic Technologies Co Ltd UT2302L-AE3-R

Part No:

UT2302L-AE3-R

Datasheet:

Package:

-

AINNX NO:

69220460-UT2302L-AE3-R

Description:

Power Field-Effect Transistor, 20V, 0.05ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, LEAD FREE PACKAGE-3

Products specifications
  • Surface Mount

    having leads that are designed to be soldered on the side of a circuit board that the body of the component is mounted on.

    YES
  • Number of Terminals
    3
  • Transistor Element Material
    SILICON
  • Rohs Code
    Yes
  • Part Life Cycle Code
    Active
  • Ihs Manufacturer
    UNISONIC TECHNOLOGIES CO LTD
  • Package Description
    SMALL OUTLINE, R-PDSO-G3
  • Number of Elements
    1
  • Package Body Material
    PLASTIC/EPOXY
  • Package Shape
    RECTANGULAR
  • Package Style
    SMALL OUTLINE
  • ECCN Code
    EAR99
  • Additional Feature

    Any Feature, including a modified Existing Feature, that is not an Existing Feature.

    ULTRA-LOW RESISTANCE
  • Terminal Position
    DUAL
  • Terminal Form

    Occurring at or forming the end of a series, succession, or the like; closing; concluding.

    GULL WING
  • Peak Reflow Temperature (Cel)
    NOT SPECIFIED
  • Reach Compliance Code
    compliant
  • Time@Peak Reflow Temperature-Max (s)
    NOT SPECIFIED
  • Pin Count

    a count of all of the component leads (or pins)

    3
  • JESD-30 Code
    R-PDSO-G3
  • Qualification Status

    An indicator of formal certification of qualifications.

    Not Qualified
  • Configuration
    SINGLE WITH BUILT-IN DIODE
  • Operating Mode

    A phase of operation during the operation and maintenance stages of the life cycle of a facility.

    ENHANCEMENT MODE
  • Transistor Application
    SWITCHING
  • Polarity/Channel Type
    N-CHANNEL
  • Drain-source On Resistance-Max
    0.05 Ω
  • Pulsed Drain Current-Max (IDM)
    10 A
  • DS Breakdown Voltage-Min
    20 V
  • FET Technology
    METAL-OXIDE SEMICONDUCTOR
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