CNY17-3X007

Vishay CNY17-3X007

Part No:

CNY17-3X007

Manufacturer:

Vishay

Datasheet:

-

Package:

-

AINNX NO:

69829060-CNY17-3X007

Category:

Accessories

Description:

Optocoupler DC-IN 1-CH Transistor With Base DC-OUT 6-Pin PDIP SMD Tube

Products specifications
  • Mount
    Surface Mount
  • Number of Pins
    6
  • Case/Package
    SMD/SMT
  • Number of Elements
    1
  • RoHS
    Compliant
  • Schedule B
    8541408000, 8541408000|8541408000|8541408000|8541408000|8541408000
  • Max Operating Temperature

    The Maximum Operating Temperature is the maximum body temperature at which the thermistor is designed to operate for extended periods of time with acceptable stability of its electrical characteristics.

    100 °C
  • Min Operating Temperature
    -55 °C
  • Max Power Dissipation

    The maximum power that the MOSFET can dissipate continuously under the specified thermal conditions.

    150 mW
  • Number of Channels
    1
  • Power Dissipation

    the process by which an electronic or electrical device produces heat (energy loss or waste) as an undesirable derivative of its primary action.

    150 mW
  • Forward Current

    Current which flows upon application of forward voltage.

    60 mA
  • Max Output Voltage

    The maximum output voltage refers to the dynamic area beyond which the output is saturated in the positive or negative direction, and is limited according to the load resistance value.

    70 V
  • Output Current per Channel
    50 mA
  • Rise Time

    In electronics, when describing a voltage or current step function, rise time is the time taken by a signal to change from a specified low value to a specified high value.

    3 µs
  • Forward Voltage

    the amount of voltage needed to get current to flow across a diode.

    1.65 V
  • Collector Emitter Voltage (VCEO)
    70 V
  • Max Collector Current
    50 mA
  • Reverse Breakdown Voltage
    6 V
  • Max Input Current
    60 mA
  • Current Transfer Ratio

    Current Transfer Ratio (CTR) is the gain of the optocoupler. It is the ratio of the phototransistor collector current to the IRED forward current. CTR = (IC / IF) * 100 It is expressed as a percentage (%).

    200 %
  • Radiation Hardening

    Radiation hardening is the process of making electronic components and circuits resistant to damage or malfunction caused by high levels of ionizing radiation, especially for environments in outer space (especially beyond the low Earth orbit), around nuclear reactors and particle accelerators, or during nuclear accidents or nuclear warfare.

    No
  • Lead Free
    Lead Free
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