IRFBC40PBF

Vishay IRFBC40PBF

Part No:

IRFBC40PBF

Manufacturer:

Vishay

Datasheet:

-

Package:

-

AINNX NO:

69828415-IRFBC40PBF

Description:

Single N-Channel 600 V 1.2 Ohms Flange Mount Power Mosfet - TO-220-3

Products specifications
  • Contact Plating

    Contact plating (finish) provides corrosion protection for base metals and optimizes the mechanical and electrical properties of the contact interfaces.

    Tin
  • Mount
    Through Hole
  • Number of Pins
    3
  • Weight
    6.000006 g
  • Case/Package
    TO-220AB
  • Number of Elements
    1
  • RoHS
    Compliant
  • Schedule B
    8541290080, 8541290080|8541290080|8541290080|8541290080|8541290080
  • Turn Off Delay Time

    It is the time from when Vgs drops below 90% of the gate drive voltage to when the drain current drops below 90% of the load current. It is the delay before current starts to transition in the load, and depends on Rg. Ciss.

    55 ns
  • Voltage Rating (DC)
    600 V
  • Packaging

    Semiconductor package is a carrier / shell used to contain and cover one or more semiconductor components or integrated circuits. The material of the shell can be metal, plastic, glass or ceramic.

    Bulk
  • Resistance
    1.2 Ω
  • Max Operating Temperature

    The Maximum Operating Temperature is the maximum body temperature at which the thermistor is designed to operate for extended periods of time with acceptable stability of its electrical characteristics.

    150 °C
  • Min Operating Temperature
    -55 °C
  • Max Power Dissipation

    The maximum power that the MOSFET can dissipate continuously under the specified thermal conditions.

    125 W
  • Current Rating

    Current rating is the maximum current that a fuse will carry for an indefinite period without too much deterioration of the fuse element.

    6.2 A
  • Number of Channels
    1
  • Voltage
    600 V
  • Element Configuration

    The distribution of electrons of an atom or molecule (or other physical structure) in atomic or molecular orbitals.

    Single
  • Current
    62 A
  • Power Dissipation

    the process by which an electronic or electrical device produces heat (energy loss or waste) as an undesirable derivative of its primary action.

    125 W
  • Turn On Delay Time

    Turn-on delay, td(on), is the time taken to charge the input capacitance of the device before drain current conduction can start.

    13 ns
  • Rise Time

    In electronics, when describing a voltage or current step function, rise time is the time taken by a signal to change from a specified low value to a specified high value.

    18 ns
  • Drain to Source Voltage (Vdss)
    600 V
  • Continuous Drain Current (ID)
    6.2 A
  • Threshold Voltage
    4 V
  • Gate to Source Voltage (Vgs)
    20 V
  • Drain to Source Breakdown Voltage
    600 V
  • Input Capacitance

    The capacitance between the input terminals of an op amp with either input grounded. It is expressed in units of farads.

    1.3 nF
  • Recovery Time
    940 ns
  • Drain to Source Resistance
    1.2 Ω
  • Rds On Max
    1.2 Ω
  • Nominal Vgs
    4 V
  • Height
    9.01 mm
  • Length
    10.41 mm
  • Width
    4.7 mm
  • REACH SVHC
    Unknown
  • Lead Free
    Lead Free
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