Vishay SMBJ48A-E3/52

Contact Plating

Contact plating (finish) provides corrosion protection for base metals and optimizes the mechanical and electrical properties of the contact interfaces.

Tin

Mount

Surface Mount

Number of Pins

2

Breakdown Voltage / V

53.3 V

Case/Package

SMB

Number of Elements

1

Reverse Stand-off Voltage

48 V

RoHS

Compliant

Schedule B

8541100080|8541100080|8541100080|8541100080|8541100080

Packaging

Semiconductor package is a carrier / shell used to contain and cover one or more semiconductor components or integrated circuits. The material of the shell can be metal, plastic, glass or ceramic.

Cut Tape

Termination

SMD/SMT

Max Operating Temperature

The Maximum Operating Temperature is the maximum body temperature at which the thermistor is designed to operate for extended periods of time with acceptable stability of its electrical characteristics.

150 °C

Min Operating Temperature

-55 °C

Max Power Dissipation

The maximum power that the MOSFET can dissipate continuously under the specified thermal conditions.

600 W

Operating Supply Voltage

The voltage level by which an electrical system is designated and to which certain operating characteristics of the system are related.

48 V

Polarity

Unidirectional

Number of Channels

1

Leakage Current

1 µA

Element Configuration

The distribution of electrons of an atom or molecule (or other physical structure) in atomic or molecular orbitals.

Single

Power Dissipation

the process by which an electronic or electrical device produces heat (energy loss or waste) as an undesirable derivative of its primary action.

600 W

Max Reverse Leakage Current

1 µA

Clamping Voltage

77.4 V

Peak Pulse Current

The peak pulse power rating of a TVS diode is defined as the instantaneous power dissipated by a device for a given pulse condition, and is a measure of the power that is dissipated in the TVS junction during a given transient event.

7.8 A

Max Surge Current

Surge current is a peak non repetitive current. Maximum (peak or surge) forward current = IFSM or if(surge), the maximum peak amount of current the diode is able to conduct in forward bias mode.

7.8 A

Peak Pulse Power

600 W

Direction

Unidirectional

Test Current

1 mA

Reverse Breakdown Voltage

53.3 V

Max Breakdown Voltage

58.9 V

ESD Protection

No

Min Breakdown Voltage

53.3 V

Height

2.24 mm

Length

4.57 mm

Width

3.94 mm

Radiation Hardening

Radiation hardening is the process of making electronic components and circuits resistant to damage or malfunction caused by high levels of ionizing radiation, especially for environments in outer space (especially beyond the low Earth orbit), around nuclear reactors and particle accelerators, or during nuclear accidents or nuclear warfare.

No

REACH SVHC

Unknown

Lead Free

Lead Free