SIS780DN-T1-GE3

Vishay Precision Group SIS780DN-T1-GE3

Part No:

SIS780DN-T1-GE3

Datasheet:

-

Package:

PowerPAK® 1212-8

AINNX NO:

40844606-SIS780DN-T1-GE3

Description:

Products specifications
  • Mounting Type
    Surface Mount
  • Package / Case
    PowerPAK® 1212-8
  • Supplier Device Package
    PowerPAK® 1212-8
  • RoHS
    Non-Compliant
  • Current - Continuous Drain (Id) @ 25℃
    18A (Tc)
  • Other Names
    SIS780DN-T1-GE3-ND SIS780DN-T1-GE3TR
  • Drive Voltage (Max Rds On, Min Rds On)
    4.5V, 10V
  • Power Dissipation (Max)
    27.7W (Tc)
  • Operating Temperature

    The operating temperature is the range of ambient temperature within which a power supply, or any other electrical equipment, operate in. This ranges from a minimum operating temperature, to a peak or maximum operating temperature, outside which, the power supply may fail.

    -55°C ~ 150°C (TJ)
  • Series
    -
  • Packaging

    Semiconductor package is a carrier / shell used to contain and cover one or more semiconductor components or integrated circuits. The material of the shell can be metal, plastic, glass or ceramic.

    Tape & Reel (TR)
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Technology
    MOSFET (Metal Oxide)
  • FET Type
    N-Channel
  • Rds On (Max) @ Id, Vgs
    13.5 mOhm @ 15A, 10V
  • Vgs(th) (Max) @ Id
    2.3V @ 250µA
  • Input Capacitance (Ciss) (Max) @ Vds
    722pF @ 15V
  • Gate Charge (Qg) (Max) @ Vgs
    24.5nC @ 10V
  • Drain to Source Voltage (Vdss)
    30V
  • Vgs (Max)
    ±20V
  • FET Feature
    Schottky Diode (Body)
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