2KBP08M-E4/51

Vishay Semiconductor Diodes Division 2KBP08M-E4/51

Part No:

2KBP08M-E4/51

Package:

4-SIP, KBPM

ROHS:

AINNX NO:

5814980-2KBP08M-E4/51

Description:

Diode Rectifier Bridge Single 800V 2A 4-Pin Case KBPM Bulk

Products specifications
  • Factory Lead Time
    24 Weeks
  • Package / Case
    4-SIP, KBPM
  • Mounting Type
    Through Hole
  • Mount
    Through Hole
  • Number of Pins
    4
  • Diode Element Material
    SILICON
  • Number of Elements
    1
  • Breakdown Voltage / V
    800V
  • Published
    2011
  • Packaging

    Semiconductor package is a carrier / shell used to contain and cover one or more semiconductor components or integrated circuits. The material of the shell can be metal, plastic, glass or ceramic.

    Tray
  • Operating Temperature

    The operating temperature is the range of ambient temperature within which a power supply, or any other electrical equipment, operate in. This ranges from a minimum operating temperature, to a peak or maximum operating temperature, outside which, the power supply may fail.

    -55°C~165°C TJ
  • JESD-609 Code
    e4
  • Pbfree Code
    yes
  • Part Status

    Parts can have many statuses as they progress through the configuration, analysis, review, and approval stages.

    Obsolete
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Number of Terminations
    4
  • Terminal Finish
    Silver (Ag)
  • Additional Feature

    Any Feature, including a modified Existing Feature, that is not an Existing Feature.

    UL RECOGNIZED
  • Capacitance
    25pF
  • Base Part Number
    2KBP08
  • Pin Count

    a count of all of the component leads (or pins)

    4
  • Element Configuration

    The distribution of electrons of an atom or molecule (or other physical structure) in atomic or molecular orbitals.

    Single
  • Diode Type
    Single Phase
  • Current - Reverse Leakage @ Vr
    5μA @ 800V
  • Voltage - Forward (Vf) (Max) @ If
    1.1V @ 3.14A
  • Case Connection
    ISOLATED
  • Forward Current

    Current which flows upon application of forward voltage.

    2A
  • Max Reverse Leakage Current
    5μA
  • Max Surge Current

    Surge current is a peak non repetitive current. Maximum (peak or surge) forward current = IFSM or if(surge), the maximum peak amount of current the diode is able to conduct in forward bias mode.

    60A
  • Output Current-Max
    2A
  • Forward Voltage

    the amount of voltage needed to get current to flow across a diode.

    1.1V
  • Average Rectified Current

    Mainly used to characterize alternating voltage and current. It can be computed by averaging the absolute value of a waveform over one full period of the waveform.

    2A
  • Number of Phases
    1
  • Peak Reverse Current

    The maximum voltage that a diode can withstand in the reverse direction without breaking down or avalanching.If this voltage is exceeded the diode may be destroyed. Diodes must have a peak inverse voltage rating that is higher than the maximum voltage that will be applied to them in a given application.

    5μA
  • Max Repetitive Reverse Voltage (Vrrm)
    800V
  • Peak Non-Repetitive Surge Current
    60A
  • Max Forward Surge Current (Ifsm)
    60A
  • Max Junction Temperature (Tj)
    165°C
  • Width
    5.08mm
  • Length
    15.24mm
  • Height
    15mm
  • RoHS Status

    RoHS means “Restriction of Certain Hazardous Substances” in the “Hazardous Substances Directive” in electrical and electronic equipment.

    ROHS3 Compliant
  • Radiation Hardening

    Radiation hardening is the process of making electronic components and circuits resistant to damage or malfunction caused by high levels of ionizing radiation, especially for environments in outer space (especially beyond the low Earth orbit), around nuclear reactors and particle accelerators, or during nuclear accidents or nuclear warfare.

    No
  • REACH SVHC
    No SVHC
  • Lead Free
    Lead Free
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