All Products

ManufacturersRFQ BlogContact UsAbout Us
Home /All Manufacturers /Fujitsu /Transistors - Special Purpose /

Transistors - Special Purpose

21 Results

  • Manufacturer+1

  • ECCN Code

  • Ihs Manufacturer

  • Package Description

  • Part Life Cycle Code

  • Reach Compliance Code

  • FET Technology

  • JESD-30 Code

  • Number of Terminals

  • Package Body Material

  • Package Shape

  • Package Style

  • Polarity/Channel Type

  • FLM5964-8F
    FLM5964-8F

    Description: RF Power Field-Effect Transistor, 1-Element, C Band, Gallium Arsenide, N-Channel, Junction FET, HERMETIC SEALED, METAL CERAMIC PACKAGE-2

    manufacturer: FUJITSU Semiconductor Limited

    • InventoryIn Stock
    • MOQ1
    • SPQ1
  • FLM1414-12F
    FLM1414-12F

    RF Power Field-Effect Transistor, 1-Element, KU Band, Gallium Arsenide, N-Channel, Junction FET, HERMETIC SEALED, METAL CERAMIC PACKAGE-2

    manufacturer: FUJITSU Semiconductor Limited

    • InventoryIn Stock
    • MOQ1
    • SPQ1
  • FLL200IB-2
    FLL200IB-2

    RF Power Field-Effect Transistor, 1-Element, L Band, Gallium Arsenide, N-Channel, Junction FET, HERMETIC SEALED, METAL CERAMIC PACKAGE-2

    manufacturer: FUJITSU Semiconductor Limited

    • InventoryIn Stock
    • MOQ1
    • SPQ1
  • FLM5964-6F
    FLM5964-6F

    Description: RF Power Field-Effect Transistor, 1-Element, C Band, Gallium Arsenide, N-Channel, Junction FET, HERMETIC SEALED, METAL CERAMIC PACKAGE-2

    manufacturer: FUJITSU Semiconductor Limited

    • InventoryIn Stock
    • MOQ1
    • SPQ1
  • FLL600IQ-3
    FLL600IQ-3

    RF Power Field-Effect Transistor, 1-Element, L Band, Gallium Arsenide, N-Channel, Junction FET

    manufacturer: FUJITSU Semiconductor Limited

    • InventoryIn Stock
    • MOQ1
    • SPQ1
  • FLM3439-4F
    FLM3439-4F

    C BAND, GaAs, N-CHANNEL, RF POWER, JFET, HERMETIC SEALED, METAL CERAMIC, CASE IB, 3 PIN

    manufacturer: FUJITSU Semiconductor Limited

    • InventoryIn Stock
    • MOQ1
    • SPQ1
  • FLM1213-4F
    FLM1213-4F

    Description: RF Power Field-Effect Transistor, 1-Element, KU Band, Gallium Arsenide, N-Channel, Junction FET, HERMETIC SEALED, METAL CERAMIC PACKAGE-2

    manufacturer: FUJITSU Semiconductor Limited

    • InventoryIn Stock
    • MOQ1
    • SPQ1
  • FHC40LG
    FHC40LG

    RF Small Signal Field-Effect Transistor, HERMETIC SEALED, METAL CERAMIC PACKAGE-4

    manufacturer: FUJITSU Semiconductor Limited

    • Inventory12
    • MOQ1
    • SPQ1
  • FLM4450-18F
    FLM4450-18F

    Description: RF Power Field-Effect Transistor, 1-Element, C Band, Gallium Arsenide, N-Channel, Junction FET, HERMETIC SEALED, METAL CERAMIC PACKAGE-2

    manufacturer: FUJITSU Semiconductor Limited

    • InventoryIn Stock
    • MOQ1
    • SPQ1
  • FLK027WG
    FLK027WG

    RF Power Field-Effect Transistor, 1-Element, KU Band, Gallium Arsenide, N-Channel, Junction FET, HERMETIC SEALED, METAL CERAMIC PACKAGE-2

    manufacturer: FUJITSU Semiconductor Limited

    • InventoryIn Stock
    • MOQ1
    • SPQ1
  • FLM1213-6F
    FLM1213-6F

    RF Power Field-Effect Transistor, 1-Element, KU Band, Gallium Arsenide, N-Channel, Junction FET, HERMETIC SEALED, METAL CERAMIC PACKAGE-2

    manufacturer: FUJITSU Semiconductor Limited

    • InventoryIn Stock
    • MOQ1
    • SPQ1
  • FLC091WF
    FLC091WF

    Description: Transistor

    manufacturer: FUJITSU Limited

    • InventoryIn Stock
    • MOQ1
    • SPQ1
  • FLM4450-8F
    FLM4450-8F

    RF Power Field-Effect Transistor, 1-Element, C Band, Gallium Arsenide, N-Channel, Junction FET, HERMETIC SEALED, METAL CERAMIC, CASE IB, 3 PIN

    manufacturer: FUJITSU Limited

    • InventoryIn Stock
    • MOQ1
    • SPQ1
  • FHX45X
    FHX45X

    Description: RF Small Signal Field-Effect Transistor, 1-Element, KU Band, Gallium Arsenide, N-Channel, High Electron Mobility FET, DIE-4

    manufacturer: FUJITSU Limited

    • InventoryIn Stock
    • MOQ1
    • SPQ1
  • FLM1314-12F
    FLM1314-12F

    KU BAND, GaAs, N-CHANNEL, RF POWER, JFET, HERMETIC SEALED, METAL CERAMIC, CASE IB, 3 PIN

    manufacturer: FUJITSU Semiconductor Limited

    • InventoryIn Stock
    • MOQ1
    • SPQ1
  • FLM1011-4D
    FLM1011-4D

    RF Power Field-Effect Transistor, 1-Element, X Band, Gallium Arsenide, N-Channel, Junction FET, HERMETIC SEALED, METAL CERAMIC PACKAGE-2

    manufacturer: FUJITSU Limited

    • InventoryIn Stock
    • MOQ1
    • SPQ1
  • FT6112D
    FT6112D

    Description: Power Field-Effect Transistor, 4.5A I(D), 120V, 0.5ohm, 4-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, RM-65, 12 PIN

    manufacturer: FUJITSU Semiconductor Limited

    • InventoryIn Stock
    • MOQ1
    • SPQ1
  • FHX14LP
    FHX14LP

    RF Small Signal Field-Effect Transistor, 1-Element, KU Band, Silicon, N-Channel, High Electron Mobility FET, HERMETIC SEALED, METAL CERAMIC PACKAGE-4

    manufacturer: FUJITSU Limited

    • InventoryIn Stock
    • MOQ1
    • SPQ1
  • FLM1314-3F
    FLM1314-3F

    RF Power Field-Effect Transistor, 1-Element, KU Band, Gallium Arsenide, N-Channel, Junction FET, HERMETIC SEALED, METAL CERAMIC, CASE IA, 4 PIN

    manufacturer: FUJITSU Limited

    • InventoryIn Stock
    • MOQ1
    • SPQ1
  • FLL400IP-2
    FLL400IP-2

    RF Power Field-Effect Transistor, 1-Element, L Band, Gallium Arsenide, N-Channel, Junction FET, HERMETIC SEALED, METAL CERAMIC PACKAGE-4

    manufacturer: FUJITSU Semiconductor Limited

    • InventoryIn Stock
    • MOQ1
    • SPQ1