FT6112D

FUJITSU Semiconductor Limited FT6112D

Part No:

FT6112D

Package:

-

AINNX NO:

69140561-FT6112D

Description:

Description: Power Field-Effect Transistor, 4.5A I(D), 120V, 0.5ohm, 4-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, RM-65, 12 PIN

Products specifications
  • Surface Mount

    having leads that are designed to be soldered on the side of a circuit board that the body of the component is mounted on.

    NO
  • Number of Terminals
    12
  • Transistor Element Material
    SILICON
  • Part Life Cycle Code
    Obsolete
  • Ihs Manufacturer
    FUJITSU SEMICONDUCTOR AMERICA INC
  • Package Description
    FLANGE MOUNT, R-PSFM-T12
  • Drain Current-Max (ID)
    4.5 A
  • Number of Elements
    4
  • Operating Temperature-Max
    150 °C
  • Package Body Material
    PLASTIC/EPOXY
  • Package Shape
    RECTANGULAR
  • Package Style
    FLANGE MOUNT
  • ECCN Code
    EAR99
  • Additional Feature

    Any Feature, including a modified Existing Feature, that is not an Existing Feature.

    LOGIC LEVEL COMPATIBLE
  • HTS Code

    HTS (Harmonized Tariff Schedule) codes are product classification codes between 8-1 digits. The first six digits are an HS code, and the countries of import assign the subsequent digits to provide additional classification. U.S. HTS codes are 1 digits and are administered by the U.S. International Trade Commission.

    8541.29.00.95
  • Terminal Position
    SINGLE
  • Terminal Form

    Occurring at or forming the end of a series, succession, or the like; closing; concluding.

    THROUGH-HOLE
  • Reach Compliance Code
    unknown
  • JESD-30 Code
    R-PSFM-T12
  • Qualification Status

    An indicator of formal certification of qualifications.

    Not Qualified
  • Configuration
    2 BANKS, COMMON SOURCE, 2 ELEMENTS WITH BUILT-IN DIODE
  • Operating Mode

    A phase of operation during the operation and maintenance stages of the life cycle of a facility.

    ENHANCEMENT MODE
  • Case Connection
    ISOLATED
  • Transistor Application
    SWITCHING
  • Polarity/Channel Type
    N-CHANNEL
  • Drain-source On Resistance-Max
    0.5 Ω
  • Pulsed Drain Current-Max (IDM)
    9 A
  • DS Breakdown Voltage-Min
    120 V
  • FET Technology
    METAL-OXIDE SEMICONDUCTOR
  • Feedback Cap-Max (Crss)
    90 pF
  • Power Dissipation Ambient-Max
    40 W
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