PN4355 TIN/LEAD

Central Semiconductor PN4355 TIN/LEAD

Part No:

PN4355 TIN/LEAD

Datasheet:

-

Package:

TO-92-3

AINNX NO:

30935324-PN4355 TIN/LEAD

Description:

Bipolar Transistors - BJT PNP 60Vcbo 60Vceo 5.0Vebo 500mA 625mW

Products specifications
  • Package / Case
    TO-92-3
  • RoHS
    N
  • Mounting Styles
    Through Hole
  • Transistor Polarity
    PNP
  • Collector- Emitter Voltage VCEO Max
    60 V
  • Emitter- Base Voltage VEBO
    5 V
  • Maximum DC Collector Current
    -
  • Pd - Power Dissipation
    625 mW
  • Gain Bandwidth Product fT
    500 MHz
  • Minimum Operating Temperature
    - 65 C
  • Maximum Operating Temperature

    the maximum body temperature at which the thermistor is designed to operate for extended periods of time with acceptable stability of its electrical characteristics.

    + 150 C
  • DC Collector/Base Gain hfe Min
    60 at 100 uA, 10 V
  • DC Current Gain hFE Max
    400 at 10 mA, 19 V
  • Factory Pack QuantityFactory Pack Quantity
    2500
  • Tradename
    0
  • Series
    PN4355
  • Packaging

    Semiconductor package is a carrier / shell used to contain and cover one or more semiconductor components or integrated circuits. The material of the shell can be metal, plastic, glass or ceramic.

    Bulk
  • Configuration
    Single
  • Collector Base Voltage (VCBO)
    60 V
  • Continuous Collector Current
    500 mA
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