RFD10N05SM96
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69255688-RFD10N05SM96
IRFD223
Harris SemiconductorSmall Signal Field-Effect Transistor, 0.7A I(D), 150V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FETRFM10N12
Harris SemiconductorPower Field-Effect Transistor, 10A I(D), 120V, 0.3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AA3N205
Harris SemiconductorPower Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FETRF1K49086
Harris SemiconductorPower Field-Effect Transistor, 3.5A I(D), 30V, 0.132ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA2N4117
Harris SemiconductorDescription: TransistorIRF622
Harris SemiconductorDescription: Power Field-Effect Transistor, 4A I(D), 200V, 1.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220ABIRF627
Harris SemiconductorPower Field-Effect Transistor, 3.3A I(D), 275V, 1.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220ABRFD10N05SM96
Harris SemiconductorPN4338
Harris SemiconductorDescription: TransistorRFH25P08
Harris SemiconductorPower Field-Effect Transistor, 25A I(D), 80V, 0.15ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-218AC