RFM10N12

Harris Semiconductor RFM10N12

Part No:

RFM10N12

Datasheet:

Package:

-

AINNX NO:

69216236-RFM10N12

Description:

Power Field-Effect Transistor, 10A I(D), 120V, 0.3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AA

Products specifications
  • Surface Mount

    having leads that are designed to be soldered on the side of a circuit board that the body of the component is mounted on.

    NO
  • Number of Terminals
    2
  • Transistor Element Material
    SILICON
  • Rohs Code
    No
  • Part Life Cycle Code
    Obsolete
  • Ihs Manufacturer
    HARRIS SEMICONDUCTOR
  • Package Description
    FLANGE MOUNT, O-MBFM-P2
  • Drain Current-Max (ID)
    10 A
  • Number of Elements
    1
  • Operating Temperature-Max
    150 °C
  • Package Body Material
    METAL
  • Package Shape
    ROUND
  • Package Style
    FLANGE MOUNT
  • Turn-off Time-Max (toff)
    270 ns
  • Turn-on Time-Max (ton)
    310 ns
  • JESD-609 Code
    e0
  • ECCN Code
    EAR99
  • Terminal Finish
    TIN LEAD
  • HTS Code

    HTS (Harmonized Tariff Schedule) codes are product classification codes between 8-1 digits. The first six digits are an HS code, and the countries of import assign the subsequent digits to provide additional classification. U.S. HTS codes are 1 digits and are administered by the U.S. International Trade Commission.

    8541.29.00.95
  • Terminal Position
    BOTTOM
  • Terminal Form

    Occurring at or forming the end of a series, succession, or the like; closing; concluding.

    PIN/PEG
  • Reach Compliance Code
    unknown
  • JESD-30 Code
    O-MBFM-P2
  • Qualification Status

    An indicator of formal certification of qualifications.

    Not Qualified
  • Configuration
    SINGLE WITH BUILT-IN DIODE
  • Operating Mode

    A phase of operation during the operation and maintenance stages of the life cycle of a facility.

    ENHANCEMENT MODE
  • Case Connection
    DRAIN
  • Transistor Application
    SWITCHING
  • Polarity/Channel Type
    N-CHANNEL
  • JEDEC-95 Code
    TO-204AA
  • Drain-source On Resistance-Max
    0.3 Ω
  • Pulsed Drain Current-Max (IDM)
    25 A
  • DS Breakdown Voltage-Min
    120 V
  • FET Technology
    METAL-OXIDE SEMICONDUCTOR
  • Power Dissipation-Max (Abs)
    75 W
  • Feedback Cap-Max (Crss)
    100 pF
  • Power Dissipation Ambient-Max
    75 W
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