IRF7748L1TRPBF

Infineon Technologies IRF7748L1TRPBF

Part No:

IRF7748L1TRPBF

Datasheet:

IRF7748L1TRPbF

Package:

DirectFET™ Isometric L6

ROHS:

AINNX NO:

6857693-IRF7748L1TRPBF

Description:

MOSFET N-CH 60V 28A DIRECTFETL6

Products specifications
  • Factory Lead Time
    12 Weeks
  • Mount
    Surface Mount
  • Mounting Type
    Surface Mount
  • Package / Case
    DirectFET™ Isometric L6
  • Number of Pins
    13
  • Current - Continuous Drain (Id) @ 25℃
    28A Ta 148A Tc
  • Drive Voltage (Max Rds On, Min Rds On)
    10V
  • Number of Elements
    1
  • Power Dissipation (Max)
    3.3W Ta 94W Tc
  • Turn Off Delay Time

    It is the time from when Vgs drops below 90% of the gate drive voltage to when the drain current drops below 90% of the load current. It is the delay before current starts to transition in the load, and depends on Rg. Ciss.

    54 ns
  • Operating Temperature

    The operating temperature is the range of ambient temperature within which a power supply, or any other electrical equipment, operate in. This ranges from a minimum operating temperature, to a peak or maximum operating temperature, outside which, the power supply may fail.

    -55°C~175°C TJ
  • Packaging

    Semiconductor package is a carrier / shell used to contain and cover one or more semiconductor components or integrated circuits. The material of the shell can be metal, plastic, glass or ceramic.

    Tape & Reel (TR)
  • Published
    2013
  • Part Status

    Parts can have many statuses as they progress through the configuration, analysis, review, and approval stages.

    Active
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • ECCN Code
    EAR99
  • Configuration
    Single
  • Power Dissipation

    the process by which an electronic or electrical device produces heat (energy loss or waste) as an undesirable derivative of its primary action.

    3.3W
  • Turn On Delay Time

    Turn-on delay, td(on), is the time taken to charge the input capacitance of the device before drain current conduction can start.

    19 ns
  • FET Type
    N-Channel
  • Rds On (Max) @ Id, Vgs
    2.2m Ω @ 89A, 10V
  • Vgs(th) (Max) @ Id
    4V @ 250μA
  • Input Capacitance (Ciss) (Max) @ Vds
    8075pF @ 50V
  • Gate Charge (Qg) (Max) @ Vgs
    220nC @ 10V
  • Rise Time

    In electronics, when describing a voltage or current step function, rise time is the time taken by a signal to change from a specified low value to a specified high value.

    104ns
  • Drain to Source Voltage (Vdss)
    60V
  • Vgs (Max)
    ±20V
  • Fall Time (Typ)
    77 ns
  • Continuous Drain Current (ID)
    148A
  • Gate to Source Voltage (Vgs)
    20V
  • Radiation Hardening

    Radiation hardening is the process of making electronic components and circuits resistant to damage or malfunction caused by high levels of ionizing radiation, especially for environments in outer space (especially beyond the low Earth orbit), around nuclear reactors and particle accelerators, or during nuclear accidents or nuclear warfare.

    No
  • RoHS Status

    RoHS means “Restriction of Certain Hazardous Substances” in the “Hazardous Substances Directive” in electrical and electronic equipment.

    ROHS3 Compliant
  • Lead Free
    Lead Free
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