IRHMS53160

International Rectifier IRHMS53160

Part No:

IRHMS53160

Datasheet:

-

Package:

-

AINNX NO:

24148571-IRHMS53160

Description:

Power Field-Effect Transistor, 45A I(D), 100V, 0.013ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-254AA, HERMETIC SEALED, CERAMIC PACKAGE-3

Products specifications
  • Lifecycle Status
    Production (Last Updated: 2 years ago)
  • Mount
    Through Hole
  • Number of Pins
    3
  • RoHS
    Non-Compliant
  • Packaging

    Semiconductor package is a carrier / shell used to contain and cover one or more semiconductor components or integrated circuits. The material of the shell can be metal, plastic, glass or ceramic.

    Bulk
  • Max Operating Temperature

    The Maximum Operating Temperature is the maximum body temperature at which the thermistor is designed to operate for extended periods of time with acceptable stability of its electrical characteristics.

    150 °C
  • Min Operating Temperature
    -55 °C
  • Power Dissipation

    the process by which an electronic or electrical device produces heat (energy loss or waste) as an undesirable derivative of its primary action.

    208 W
  • Continuous Drain Current (ID)
    45 A
  • Gate to Source Voltage (Vgs)
    20 V
  • Drain to Source Breakdown Voltage
    100 V
  • Radiation Hardening

    Radiation hardening is the process of making electronic components and circuits resistant to damage or malfunction caused by high levels of ionizing radiation, especially for environments in outer space (especially beyond the low Earth orbit), around nuclear reactors and particle accelerators, or during nuclear accidents or nuclear warfare.

    Yes
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