FMM60-02TF

IXYS FMM60-02TF

Part No:

FMM60-02TF

Manufacturer:

IXYS

Datasheet:

FMM60-02TF

Package:

i4-Pac™-5

ROHS:

AINNX NO:

6824538-FMM60-02TF

Description:

MOSFET 2N-CH 200V 33A I4-PAC

Products specifications
  • Factory Lead Time
    30 Weeks
  • Mount
    Through Hole
  • Mounting Type
    Through Hole
  • Package / Case
    i4-Pac™-5
  • Number of Pins
    5
  • Transistor Element Material
    SILICON
  • Number of Elements
    2
  • Operating Temperature

    The operating temperature is the range of ambient temperature within which a power supply, or any other electrical equipment, operate in. This ranges from a minimum operating temperature, to a peak or maximum operating temperature, outside which, the power supply may fail.

    -55°C~150°C TJ
  • Packaging

    Semiconductor package is a carrier / shell used to contain and cover one or more semiconductor components or integrated circuits. The material of the shell can be metal, plastic, glass or ceramic.

    Tube
  • Series
    HiPerFET™
  • Published
    2008
  • JESD-609 Code
    e1
  • Pbfree Code
    yes
  • Part Status

    Parts can have many statuses as they progress through the configuration, analysis, review, and approval stages.

    Active
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Number of Terminations
    5
  • ECCN Code
    EAR99
  • Terminal Finish
    Tin/Silver/Copper (Sn/Ag/Cu)
  • Additional Feature

    Any Feature, including a modified Existing Feature, that is not an Existing Feature.

    AVALANCHE RATED, UL RECOGNIZED
  • Max Power Dissipation

    The maximum power that the MOSFET can dissipate continuously under the specified thermal conditions.

    125W
  • Terminal Position
    SINGLE
  • Peak Reflow Temperature (Cel)
    NOT SPECIFIED
  • Time@Peak Reflow Temperature-Max (s)
    NOT SPECIFIED
  • Base Part Number
    FMM
  • Pin Count

    a count of all of the component leads (or pins)

    5
  • Qualification Status

    An indicator of formal certification of qualifications.

    Not Qualified
  • Configuration
    SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE
  • Operating Mode

    A phase of operation during the operation and maintenance stages of the life cycle of a facility.

    ENHANCEMENT MODE
  • Case Connection
    ISOLATED
  • Power - Max
    125W
  • FET Type
    2 N-Channel (Dual)
  • Transistor Application
    SWITCHING
  • Rds On (Max) @ Id, Vgs
    40m Ω @ 30A, 10V
  • Vgs(th) (Max) @ Id
    4.5V @ 250μA
  • Input Capacitance (Ciss) (Max) @ Vds
    3700pF @ 25V
  • Gate Charge (Qg) (Max) @ Vgs
    90nC @ 10V
  • Drain to Source Voltage (Vdss)
    200V
  • Continuous Drain Current (ID)
    33A
  • Drain-source On Resistance-Max
    0.04Ohm
  • DS Breakdown Voltage-Min
    200V
  • Avalanche Energy Rating (Eas)
    1000 mJ
  • FET Technology
    METAL-OXIDE SEMICONDUCTOR
  • FET Feature
    Standard
  • RoHS Status

    RoHS means “Restriction of Certain Hazardous Substances” in the “Hazardous Substances Directive” in electrical and electronic equipment.

    ROHS3 Compliant
  • Lead Free
    Lead Free
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