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Home /Discrete Semiconductor Products /Transistors - FETs, MOSFETs - Arrays /IXTY8N65X2 TRL /
IXTY8N65X2 TRL

IXYS Integrated Circuits Division / Littelfuse IXTY8N65X2 TRL

Part No:

IXTY8N65X2 TRL

Datasheet:

-

Package:

-

AINNX NO:

31978213-IXTY8N65X2 TRL

Description:

Products specifications
  • EU RoHS
    Compliant
  • ECCN (US)
    EAR99
  • HTS
    8541.29.00.95
  • Category
    Power MOSFET
  • Channel Mode
    Enhancement
  • Number of Elements per Chip
    1
  • Maximum Drain Source Voltage (V)
    650
  • Maximum Gate Source Voltage (V)
    ±30
  • Maximum Gate Threshold Voltage (V)
    5
  • Maximum Continuous Drain Current (A)
    8
  • Maximum Gate Source Leakage Current (nA)
    100
  • Maximum IDSS (uA)
    10
  • Typical Gate Charge @ Vgs (nC)
    12@10V
  • Typical Gate Charge @ 10V (nC)
    12
  • Typical Input Capacitance @ Vds (pF)
    800@25V
  • Maximum Power Dissipation (mW)
    150000
  • Typical Fall Time (ns)
    24
  • Typical Rise Time (ns)
    28
  • Typical Turn-Off Delay Time (ns)
    53
  • Typical Turn-On Delay Time (ns)
    24
  • Minimum Operating Temperature (°C)
    -55
  • Maximum Operating Temperature (°C)
    150
  • Part Status

    Parts can have many statuses as they progress through the configuration, analysis, review, and approval stages.

    Acquired
  • Configuration
    Single
  • Channel Type
    N
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