Package / Case
TO-263-3
EU RoHS
Compliant
ECCN (US)
EAR99
Automotive
No
PPAP
No
Category
Power MOSFET
Channel Mode
Enhancement
Number of Elements per Chip
1
Maximum Drain Source Voltage (V)
850
Maximum Gate Source Voltage (V)
±30
Maximum Continuous Drain Current (A)
14
Typical Gate Charge @ Vgs (nC)
30@10V
Typical Gate Charge @ 10V (nC)
30
Typical Input Capacitance @ Vds (pF)
1043@25V
Maximum Power Dissipation (mW)
460000
Typical Fall Time (ns)
13
Typical Rise Time (ns)
30
Typical Turn-Off Delay Time (ns)
36
Typical Turn-On Delay Time (ns)
16
Minimum Operating Temperature (°C)
-55
Maximum Operating Temperature (°C)
150
Mounting
Surface Mount
Package Height
4.7(Max)
Package Width
9.4(Max)
Package Length
10.2(Max)
PCB changed
2
Tab
Tab
Supplier Package
TO-263HV
Vds - Drain-Source Breakdown Voltage
850 V
Vgs th - Gate-Source Threshold Voltage
3.5 V
Pd - Power Dissipation
460 W
Transistor Polarity
N-Channel
Maximum Operating Temperature
the maximum body temperature at which the thermistor is designed to operate for extended periods of time with acceptable stability of its electrical characteristics.
+ 150 C
Vgs - Gate-Source Voltage
- 30 V, + 30 V
Minimum Operating Temperature
- 55 C
Mounting Styles
SMD/SMT
Qg - Gate Charge
30 nC
Rds On - Drain-Source Resistance
550 mOhms
Id - Continuous Drain Current
14 A
Part Status
Parts can have many statuses as they progress through the configuration, analysis, review, and approval stages.
Active
Technology
Si
Pin Count
a count of all of the component leads (or pins)
3
Configuration
Single
Number of Channels
1 Channel
Channel Type
N