Littelfuse IXTY01N100

Package / Case

TO-252-3

Material

Si

EU RoHS

Compliant with Exemption

ECCN (US)

EAR99

HTS

8541.10.00.80

Automotive

No

PPAP

No

Category

Power MOSFET

Channel Mode

Enhancement

Number of Elements per Chip

1

Maximum Drain Source Voltage (V)

1000

Maximum Gate Source Voltage (V)

±20

Maximum Continuous Drain Current (A)

0.1

Typical Gate Charge @ Vgs (nC)

6.9@10V

Typical Gate Charge @ 10V (nC)

6.9

Typical Input Capacitance @ Vds (pF)

54@25V

Maximum Power Dissipation (mW)

25000

Typical Fall Time (ns)

28

Typical Rise Time (ns)

12

Typical Turn-Off Delay Time (ns)

28

Typical Turn-On Delay Time (ns)

12

Minimum Operating Temperature (°C)

-55

Maximum Operating Temperature (°C)

150

Mounting

Surface Mount

Package Height

2.38(Max)

Package Width

6.22(Max)

Package Length

6.73(Max)

PCB changed

2

Tab

Tab

Supplier Package

TO-252AA

Continuous Drain Current

0.1(A)

Drain-Source On-Volt

1000(V)

Operating Temperature Classification

Military

Package Type

TO-252AA

Operating Temp Range

-55C to 150C

Gate-Source Voltage (Max)

±20(V)

Number of Elements

1

Rad Hardened

No

Qualification

-

Continuous Drain Current Id

100mA

Vds - Drain-Source Breakdown Voltage

1 kV

Pd - Power Dissipation

25 W

Transistor Polarity

N-Channel

Maximum Operating Temperature

the maximum body temperature at which the thermistor is designed to operate for extended periods of time with acceptable stability of its electrical characteristics.

+ 150 C

Vgs - Gate-Source Voltage

- 20 V, + 20 V

Minimum Operating Temperature

- 55 C

Mounting Styles

SMD/SMT

Rds On - Drain-Source Resistance

80 Ohms

Id - Continuous Drain Current

100 mA

Series

IXTY01N100

Part Status

Parts can have many statuses as they progress through the configuration, analysis, review, and approval stages.

Active

Type

Power MOSFET

Technology

Si

Pin Count

a count of all of the component leads (or pins)

3

Polarity

N

Configuration

Single

Number of Channels

1 Channel

Power Dissipation

the process by which an electronic or electrical device produces heat (energy loss or waste) as an undesirable derivative of its primary action.

25(W)

Channel Type

N