2N2857

Microsemi Corporation 2N2857

Part No:

2N2857

Datasheet:

2N2857

Package:

TO-206AF, TO-72-4 Metal Can

AINNX NO:

6085465-2N2857

Description:

Trans RF BJT NPN 15V 0.04A 4-Pin TO-72

Products specifications
  • Factory Lead Time
    12 Weeks
  • Mount
    Through Hole
  • Mounting Type
    Through Hole
  • Package / Case
    TO-206AF, TO-72-4 Metal Can
  • Number of Pins
    4
  • Transistor Element Material
    SILICON
  • Collector-Emitter Breakdown Voltage
    15V
  • Number of Elements
    1
  • Operating Temperature

    The operating temperature is the range of ambient temperature within which a power supply, or any other electrical equipment, operate in. This ranges from a minimum operating temperature, to a peak or maximum operating temperature, outside which, the power supply may fail.

    -65°C~200°C TJ
  • Packaging

    Semiconductor package is a carrier / shell used to contain and cover one or more semiconductor components or integrated circuits. The material of the shell can be metal, plastic, glass or ceramic.

    Bulk
  • Published
    2007
  • JESD-609 Code
    e0
  • Pbfree Code
    no
  • Part Status

    Parts can have many statuses as they progress through the configuration, analysis, review, and approval stages.

    Obsolete
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Number of Terminations
    4
  • ECCN Code
    EAR99
  • Terminal Finish
    Tin/Lead (Sn/Pb)
  • Max Power Dissipation

    The maximum power that the MOSFET can dissipate continuously under the specified thermal conditions.

    200mW
  • Terminal Position
    BOTTOM
  • Terminal Form

    Occurring at or forming the end of a series, succession, or the like; closing; concluding.

    WIRE
  • Frequency
    1.6GHz
  • Configuration
    SINGLE
  • Power Dissipation

    the process by which an electronic or electrical device produces heat (energy loss or waste) as an undesirable derivative of its primary action.

    200mW
  • Transistor Application
    AMPLIFIER
  • Polarity/Channel Type
    NPN
  • Transistor Type
    NPN
  • Collector Emitter Voltage (VCEO)
    15V
  • Max Collector Current
    40mA
  • DC Current Gain (hFE) (Min) @ Ic, Vce
    30 @ 3mA 1V
  • Gain
    12.5dB ~ 21dB @ 450MHz
  • Transition Frequency
    1600MHz
  • Frequency - Transition
    500MHz
  • Collector Base Voltage (VCBO)
    30V
  • Emitter Base Voltage (VEBO)
    3V
  • Noise Figure (dB Typ @ f)
    4.5dB @ 450MHz
  • Radiation Hardening

    Radiation hardening is the process of making electronic components and circuits resistant to damage or malfunction caused by high levels of ionizing radiation, especially for environments in outer space (especially beyond the low Earth orbit), around nuclear reactors and particle accelerators, or during nuclear accidents or nuclear warfare.

    No
  • RoHS Status

    RoHS means “Restriction of Certain Hazardous Substances” in the “Hazardous Substances Directive” in electrical and electronic equipment.

    Non-RoHS Compliant
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