APT100GN60LDQ4G

Microsemi Corporation APT100GN60LDQ4G

Part No:

APT100GN60LDQ4G

Package:

TO-264-3, TO-264AA

ROHS:

AINNX NO:

5838772-APT100GN60LDQ4G

Description:

IGBT 600V 229A 625W TO264

Products specifications
  • Factory Lead Time
    25 Weeks
  • Contact Plating

    Contact plating (finish) provides corrosion protection for base metals and optimizes the mechanical and electrical properties of the contact interfaces.

    Tin
  • Mount
    Through Hole
  • Mounting Type
    Through Hole
  • Package / Case
    TO-264-3, TO-264AA
  • Weight
    10.6g
  • Transistor Element Material
    SILICON
  • Collector-Emitter Breakdown Voltage
    600V
  • Number of Elements
    1
  • Test Conditions
    400V, 100A, 1 Ω, 15V
  • Operating Temperature

    The operating temperature is the range of ambient temperature within which a power supply, or any other electrical equipment, operate in. This ranges from a minimum operating temperature, to a peak or maximum operating temperature, outside which, the power supply may fail.

    -55°C~175°C TJ
  • Packaging

    Semiconductor package is a carrier / shell used to contain and cover one or more semiconductor components or integrated circuits. The material of the shell can be metal, plastic, glass or ceramic.

    Tube
  • Published
    1999
  • JESD-609 Code
    e1
  • Pbfree Code
    yes
  • Part Status

    Parts can have many statuses as they progress through the configuration, analysis, review, and approval stages.

    Active
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Number of Terminations
    3
  • ECCN Code
    EAR99
  • Additional Feature

    Any Feature, including a modified Existing Feature, that is not an Existing Feature.

    HIGH RELIABILITY
  • Voltage - Rated DC
    600V
  • Max Power Dissipation

    The maximum power that the MOSFET can dissipate continuously under the specified thermal conditions.

    625W
  • Current Rating

    Current rating is the maximum current that a fuse will carry for an indefinite period without too much deterioration of the fuse element.

    100A
  • Pin Count

    a count of all of the component leads (or pins)

    3
  • JESD-30 Code
    R-PSFM-T3
  • Element Configuration

    The distribution of electrons of an atom or molecule (or other physical structure) in atomic or molecular orbitals.

    Single
  • Case Connection
    COLLECTOR
  • Input Type
    Standard
  • Transistor Application
    POWER CONTROL
  • Polarity/Channel Type
    N-CHANNEL
  • Collector Emitter Voltage (VCEO)
    600V
  • Max Collector Current
    229A
  • Turn On Time

    The time that it takes a gate circuit to allow a current to reach its full value.

    96 ns
  • Vce(on) (Max) @ Vge, Ic
    1.85V @ 15V, 100A
  • Continuous Collector Current
    229A
  • Turn Off Time-Nom (toff)
    435 ns
  • IGBT Type
    Trench Field Stop
  • Gate Charge

    the amount of charge that needs to be injected into the gate electrode to turn ON (drive) the MOSFET.

    600nC
  • Current - Collector Pulsed (Icm)
    300A
  • Td (on/off) @ 25°C
    31ns/310ns
  • Switching Energy
    4.75mJ (on), 2.675mJ (off)
  • Gate-Emitter Voltage-Max
    30V
  • Gate-Emitter Thr Voltage-Max
    6.5V
  • Height
    5.21mm
  • Length
    26.49mm
  • Width
    20.5mm
  • Radiation Hardening

    Radiation hardening is the process of making electronic components and circuits resistant to damage or malfunction caused by high levels of ionizing radiation, especially for environments in outer space (especially beyond the low Earth orbit), around nuclear reactors and particle accelerators, or during nuclear accidents or nuclear warfare.

    No
  • RoHS Status

    RoHS means “Restriction of Certain Hazardous Substances” in the “Hazardous Substances Directive” in electrical and electronic equipment.

    RoHS Compliant
  • Lead Free
    Lead Free
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