Microsemi Corporation APT80GA60LD40

Factory Lead Time

33 Weeks

Mount

Through Hole

Mounting Type

Through Hole

Package / Case

TO-264-3, TO-264AA

Weight

10.6g

Transistor Element Material

SILICON

Collector-Emitter Breakdown Voltage

600V

Number of Elements

1

Test Conditions

400V, 47A, 4.7 Ω, 15V

Operating Temperature

The operating temperature is the range of ambient temperature within which a power supply, or any other electrical equipment, operate in. This ranges from a minimum operating temperature, to a peak or maximum operating temperature, outside which, the power supply may fail.

-55°C~150°C TJ

Packaging

Semiconductor package is a carrier / shell used to contain and cover one or more semiconductor components or integrated circuits. The material of the shell can be metal, plastic, glass or ceramic.

Tube

Series

POWER MOS 8™

Published

1999

JESD-609 Code

e1

Pbfree Code

yes

Part Status

Parts can have many statuses as they progress through the configuration, analysis, review, and approval stages.

Active

Moisture Sensitivity Level (MSL)

1 (Unlimited)

Number of Terminations

3

ECCN Code

EAR99

Terminal Finish

Tin/Silver/Copper (Sn/Ag/Cu)

Additional Feature

Any Feature, including a modified Existing Feature, that is not an Existing Feature.

LOW CONDUCTION LOSS

Max Power Dissipation

The maximum power that the MOSFET can dissipate continuously under the specified thermal conditions.

625W

Pin Count

a count of all of the component leads (or pins)

3

JESD-30 Code

R-PSFM-T3

Element Configuration

The distribution of electrons of an atom or molecule (or other physical structure) in atomic or molecular orbitals.

Single

Case Connection

COLLECTOR

Input Type

Standard

Transistor Application

POWER CONTROL

Polarity/Channel Type

N-CHANNEL

Collector Emitter Voltage (VCEO)

600V

Max Collector Current

143A

Reverse Recovery Time

22 ns

Turn On Time

The time that it takes a gate circuit to allow a current to reach its full value.

52 ns

Vce(on) (Max) @ Vge, Ic

2.5V @ 15V, 47A

Continuous Collector Current

143A

Turn Off Time-Nom (toff)

326 ns

IGBT Type

PT

Gate Charge

the amount of charge that needs to be injected into the gate electrode to turn ON (drive) the MOSFET.

230nC

Current - Collector Pulsed (Icm)

240A

Td (on/off) @ 25°C

23ns/158ns

Switching Energy

840μJ (on), 751μJ (off)

Height

5.21mm

Length

26.49mm

Width

20.5mm

Radiation Hardening

Radiation hardening is the process of making electronic components and circuits resistant to damage or malfunction caused by high levels of ionizing radiation, especially for environments in outer space (especially beyond the low Earth orbit), around nuclear reactors and particle accelerators, or during nuclear accidents or nuclear warfare.

No

RoHS Status

RoHS means “Restriction of Certain Hazardous Substances” in the “Hazardous Substances Directive” in electrical and electronic equipment.

RoHS Compliant