MRF517

Microsemi Corporation MRF517

Part No:

MRF517

Datasheet:

MRF517

Package:

TO-205AD, TO-39-3 Metal Can

ROHS:

AINNX NO:

6084593-MRF517

Description:

Trans GP BJT NPN 20V 0.15A 3-Pin TO-39

Products specifications
  • Lifecycle Status
    IN PRODUCTION (Last Updated: 3 weeks ago)
  • Factory Lead Time
    13 Weeks
  • Mount
    Through Hole
  • Mounting Type
    Through Hole
  • Package / Case
    TO-205AD, TO-39-3 Metal Can
  • Number of Pins
    3
  • Transistor Element Material
    SILICON
  • Collector-Emitter Breakdown Voltage
    20V
  • Number of Elements
    1
  • Packaging

    Semiconductor package is a carrier / shell used to contain and cover one or more semiconductor components or integrated circuits. The material of the shell can be metal, plastic, glass or ceramic.

    Bulk
  • Published
    2004
  • JESD-609 Code
    e0
  • Pbfree Code
    no
  • Part Status

    Parts can have many statuses as they progress through the configuration, analysis, review, and approval stages.

    Obsolete
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Number of Terminations
    3
  • ECCN Code
    EAR99
  • Terminal Finish
    TIN LEAD
  • HTS Code

    HTS (Harmonized Tariff Schedule) codes are product classification codes between 8-1 digits. The first six digits are an HS code, and the countries of import assign the subsequent digits to provide additional classification. U.S. HTS codes are 1 digits and are administered by the U.S. International Trade Commission.

    8541.29.00.75
  • Max Power Dissipation

    The maximum power that the MOSFET can dissipate continuously under the specified thermal conditions.

    2.5W
  • Terminal Position
    BOTTOM
  • Terminal Form

    Occurring at or forming the end of a series, succession, or the like; closing; concluding.

    WIRE
  • Pin Count

    a count of all of the component leads (or pins)

    3
  • Configuration
    SINGLE
  • Power - Max
    2.5W
  • Transistor Application
    AMPLIFIER
  • Polarity/Channel Type
    NPN
  • Transistor Type
    NPN
  • Collector Emitter Voltage (VCEO)
    20V
  • Max Collector Current
    150mA
  • DC Current Gain (hFE) (Min) @ Ic, Vce
    50 @ 60mA 10V
  • Gain
    9dB ~ 10dB
  • Transition Frequency
    4000MHz
  • Frequency - Transition
    4GHz
  • Collector Base Voltage (VCBO)
    35V
  • Highest Frequency Band
    ULTRA HIGH FREQUENCY B
  • Collector-Base Capacitance-Max
    4.5pF
  • Radiation Hardening

    Radiation hardening is the process of making electronic components and circuits resistant to damage or malfunction caused by high levels of ionizing radiation, especially for environments in outer space (especially beyond the low Earth orbit), around nuclear reactors and particle accelerators, or during nuclear accidents or nuclear warfare.

    No
  • RoHS Status

    RoHS means “Restriction of Certain Hazardous Substances” in the “Hazardous Substances Directive” in electrical and electronic equipment.

    RoHS Compliant
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