PMEG4010CPA,115

Nexperia USA Inc. PMEG4010CPA,115

Part No:

PMEG4010CPA,115

Manufacturer:

Nexperia USA Inc.

Datasheet:

PMEG4010CPA

Package:

3-PowerUDFN

ROHS:

AINNX NO:

5824010-PMEG4010CPA,115

Description:

NEXPERIA - PMEG4010CPA,115 - Schottky Rectifier, 40 V, 1 A, Dual Common Cathode, SOT-1061, 3 Pins, 500 mV

Products specifications
  • Factory Lead Time
    8 Weeks
  • Mount
    Surface Mount
  • Mounting Type
    Surface Mount
  • Package / Case
    3-PowerUDFN
  • Number of Pins
    3
  • Diode Element Material
    SILICON
  • Number of Elements
    2
  • Packaging

    Semiconductor package is a carrier / shell used to contain and cover one or more semiconductor components or integrated circuits. The material of the shell can be metal, plastic, glass or ceramic.

    Tape & Reel (TR)
  • Published
    2010
  • JESD-609 Code
    e3
  • Part Status

    Parts can have many statuses as they progress through the configuration, analysis, review, and approval stages.

    Active
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Number of Terminations
    3
  • Terminal Finish
    Tin (Sn)
  • Max Operating Temperature

    The Maximum Operating Temperature is the maximum body temperature at which the thermistor is designed to operate for extended periods of time with acceptable stability of its electrical characteristics.

    150°C
  • Min Operating Temperature
    -55°C
  • Max Power Dissipation

    The maximum power that the MOSFET can dissipate continuously under the specified thermal conditions.

    500mW
  • Terminal Position
    DUAL
  • Base Part Number
    PMEG4010CPA
  • Pin Count

    a count of all of the component leads (or pins)

    3
  • Element Configuration

    The distribution of electrons of an atom or molecule (or other physical structure) in atomic or molecular orbitals.

    Common Cathode
  • Speed
    Fast Recovery =< 500ns, > 200mA (Io)
  • Diode Type
    Schottky
  • Current - Reverse Leakage @ Vr
    55μA @ 40V
  • Voltage - Forward (Vf) (Max) @ If
    500mV @ 1A
  • Forward Current

    Current which flows upon application of forward voltage.

    1A
  • Operating Temperature - Junction
    150°C Max
  • Max Surge Current

    Surge current is a peak non repetitive current. Maximum (peak or surge) forward current = IFSM or if(surge), the maximum peak amount of current the diode is able to conduct in forward bias mode.

    9A
  • Output Current-Max
    1A
  • Forward Voltage

    the amount of voltage needed to get current to flow across a diode.

    500mV
  • Max Reverse Voltage (DC)
    40V
  • Average Rectified Current

    Mainly used to characterize alternating voltage and current. It can be computed by averaging the absolute value of a waveform over one full period of the waveform.

    1A
  • Reverse Recovery Time
    45 ns
  • Peak Reverse Current

    The maximum voltage that a diode can withstand in the reverse direction without breaking down or avalanching.If this voltage is exceeded the diode may be destroyed. Diodes must have a peak inverse voltage rating that is higher than the maximum voltage that will be applied to them in a given application.

    55μA
  • Max Repetitive Reverse Voltage (Vrrm)
    40V
  • Peak Non-Repetitive Surge Current
    9A
  • Diode Configuration
    1 Pair Common Cathode
  • Recovery Time
    45 ns
  • Radiation Hardening

    Radiation hardening is the process of making electronic components and circuits resistant to damage or malfunction caused by high levels of ionizing radiation, especially for environments in outer space (especially beyond the low Earth orbit), around nuclear reactors and particle accelerators, or during nuclear accidents or nuclear warfare.

    No
  • RoHS Status

    RoHS means “Restriction of Certain Hazardous Substances” in the “Hazardous Substances Directive” in electrical and electronic equipment.

    ROHS3 Compliant
  • Lead Free
    Lead Free
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