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PDTA123EMB，315

NXP PDTA123EMB，315

Part No:

PDTA123EMB，315

Manufacturer:

Datasheet:

Package:

SC-101, SOT-883

AINNX NO:

36670616-PDTA123EMB，315

Category:

Transistors - Bipolar (BJT) - Single, Pre-Biased

Description:

NOW NEXPERIA PDTA123EMB - SMALL

Products specifications

Mounting Type
Surface Mount
Package / Case
SC-101, SOT-883
Supplier Device Package
DFN1006B-3
Package
Bulk
Current-Collector (Ic) (Max)
100 mA
Mfr
NXP USA Inc.
Product Status
Active
Series
-
Power - Max
250 mW
Transistor Type
PNP - Pre-Biased
DC Current Gain (hFE) (Min) @ Ic, Vce
30 @ 20mA, 5V
Current - Collector Cutoff (Max)
1µA
Vce Saturation (Max) @ Ib, Ic
150mV @ 500µA, 10mA
Voltage - Collector Emitter Breakdown (Max)
50 V
Frequency - Transition
180 MHz
Resistor - Base (R1)
2.2 kOhms
Resistor - Emitter Base (R2)
2.2 kOhms

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