FGH40N60SMD

ON Semiconductor FGH40N60SMD

Part No:

FGH40N60SMD

Manufacturer:

ON Semiconductor

Datasheet:

FGH40N60SMD

Package:

TO-247-3

ROHS:

AINNX NO:

5836479-FGH40N60SMD

Description:

IGBT 600V 80A 349W TO-247-3

Products specifications
  • Factory Lead Time
    5 Weeks
  • Mount
    Through Hole
  • Mounting Type
    Through Hole
  • Package / Case
    TO-247-3
  • Number of Pins
    3
  • Weight
    6.39g
  • Transistor Element Material
    SILICON
  • Collector-Emitter Breakdown Voltage
    600V
  • Number of Elements
    1
  • Test Conditions
    400V, 40A, 6 Ω, 15V
  • Operating Temperature

    The operating temperature is the range of ambient temperature within which a power supply, or any other electrical equipment, operate in. This ranges from a minimum operating temperature, to a peak or maximum operating temperature, outside which, the power supply may fail.

    -55°C~175°C TJ
  • Packaging

    Semiconductor package is a carrier / shell used to contain and cover one or more semiconductor components or integrated circuits. The material of the shell can be metal, plastic, glass or ceramic.

    Tube
  • Published
    2013
  • JESD-609 Code
    e3
  • Pbfree Code
    yes
  • Part Status

    Parts can have many statuses as they progress through the configuration, analysis, review, and approval stages.

    Active
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Number of Terminations
    3
  • ECCN Code
    EAR99
  • Terminal Finish
    Tin (Sn)
  • Additional Feature

    Any Feature, including a modified Existing Feature, that is not an Existing Feature.

    LOW CONDUCTION LOSS
  • HTS Code

    HTS (Harmonized Tariff Schedule) codes are product classification codes between 8-1 digits. The first six digits are an HS code, and the countries of import assign the subsequent digits to provide additional classification. U.S. HTS codes are 1 digits and are administered by the U.S. International Trade Commission.

    8541.29.00.95
  • Max Power Dissipation

    The maximum power that the MOSFET can dissipate continuously under the specified thermal conditions.

    349W
  • Base Part Number
    FGH40N60
  • Rise Time-Max
    28ns
  • Element Configuration

    The distribution of electrons of an atom or molecule (or other physical structure) in atomic or molecular orbitals.

    Single
  • Case Connection
    COLLECTOR
  • Input Type
    Standard
  • Power - Max
    349W
  • Transistor Application
    POWER CONTROL
  • Polarity/Channel Type
    N-CHANNEL
  • Collector Emitter Voltage (VCEO)
    600V
  • Max Collector Current
    80A
  • Reverse Recovery Time
    36 ns
  • JEDEC-95 Code
    TO-247AB
  • Turn On Time

    The time that it takes a gate circuit to allow a current to reach its full value.

    37 ns
  • Vce(on) (Max) @ Vge, Ic
    2.5V @ 15V, 40A
  • Turn Off Time-Nom (toff)
    132 ns
  • IGBT Type
    Field Stop
  • Gate Charge

    the amount of charge that needs to be injected into the gate electrode to turn ON (drive) the MOSFET.

    119nC
  • Current - Collector Pulsed (Icm)
    120A
  • Td (on/off) @ 25°C
    12ns/92ns
  • Switching Energy
    870μJ (on), 260μJ (off)
  • Gate-Emitter Voltage-Max
    20V
  • Gate-Emitter Thr Voltage-Max
    6V
  • Fall Time-Max (tf)
    17ns
  • Height
    20.6mm
  • Length
    15.6mm
  • Width
    4.7mm
  • REACH SVHC
    No SVHC
  • Radiation Hardening

    Radiation hardening is the process of making electronic components and circuits resistant to damage or malfunction caused by high levels of ionizing radiation, especially for environments in outer space (especially beyond the low Earth orbit), around nuclear reactors and particle accelerators, or during nuclear accidents or nuclear warfare.

    No
  • RoHS Status

    RoHS means “Restriction of Certain Hazardous Substances” in the “Hazardous Substances Directive” in electrical and electronic equipment.

    ROHS3 Compliant
  • Lead Free
    Lead Free
0 Similar Products Remaining
Documents & Media Download datasheets and manufacturer documentation for ON Semiconductor FGH40N60SMD.