ON Semiconductor FGH40T120SMD-F155

Lifecycle Status

ACTIVE (Last Updated: 4 days ago)

Factory Lead Time

5 Weeks

Contact Plating

Contact plating (finish) provides corrosion protection for base metals and optimizes the mechanical and electrical properties of the contact interfaces.

Tin

Mount

Through Hole

Mounting Type

Through Hole

Package / Case

TO-247-3

Number of Pins

3

Weight

6.39g

Collector-Emitter Breakdown Voltage

1.2kV

Test Conditions

600V, 40A, 10 Ω, 15V

Turn Off Delay Time

It is the time from when Vgs drops below 90% of the gate drive voltage to when the drain current drops below 90% of the load current. It is the delay before current starts to transition in the load, and depends on Rg. Ciss.

475 ns

Operating Temperature

The operating temperature is the range of ambient temperature within which a power supply, or any other electrical equipment, operate in. This ranges from a minimum operating temperature, to a peak or maximum operating temperature, outside which, the power supply may fail.

-55°C~175°C TJ

Packaging

Semiconductor package is a carrier / shell used to contain and cover one or more semiconductor components or integrated circuits. The material of the shell can be metal, plastic, glass or ceramic.

Tube

Published

2013

Pbfree Code

yes

Part Status

Parts can have many statuses as they progress through the configuration, analysis, review, and approval stages.

Active

Moisture Sensitivity Level (MSL)

1 (Unlimited)

Max Power Dissipation

The maximum power that the MOSFET can dissipate continuously under the specified thermal conditions.

555W

Element Configuration

The distribution of electrons of an atom or molecule (or other physical structure) in atomic or molecular orbitals.

Single

Power Dissipation

the process by which an electronic or electrical device produces heat (energy loss or waste) as an undesirable derivative of its primary action.

555W

Input Type

Standard

Turn On Delay Time

Turn-on delay, td(on), is the time taken to charge the input capacitance of the device before drain current conduction can start.

40 ns

Polarity/Channel Type

N-CHANNEL

Collector Emitter Voltage (VCEO)

1.2kV

Max Collector Current

80A

Reverse Recovery Time

65 ns

Voltage - Collector Emitter Breakdown (Max)

1200V

Vce(on) (Max) @ Vge, Ic

2.4V @ 15V, 40A

Max Junction Temperature (Tj)

175°C

Continuous Collector Current

80A

IGBT Type

Trench Field Stop

Gate Charge

the amount of charge that needs to be injected into the gate electrode to turn ON (drive) the MOSFET.

370nC

Current - Collector Pulsed (Icm)

160A

Td (on/off) @ 25°C

40ns/475ns

Switching Energy

2.7mJ (on), 1.1mJ (off)

Gate-Emitter Voltage-Max

25V

Gate-Emitter Thr Voltage-Max

7.5V

Height

24.75mm

Radiation Hardening

Radiation hardening is the process of making electronic components and circuits resistant to damage or malfunction caused by high levels of ionizing radiation, especially for environments in outer space (especially beyond the low Earth orbit), around nuclear reactors and particle accelerators, or during nuclear accidents or nuclear warfare.

No

RoHS Status

RoHS means “Restriction of Certain Hazardous Substances” in the “Hazardous Substances Directive” in electrical and electronic equipment.

ROHS3 Compliant

Lead Free

Lead Free