MMBFJ112

ON Semiconductor MMBFJ112

Part No:

MMBFJ112

Manufacturer:

ON Semiconductor

Package:

TO-236-3, SC-59, SOT-23-3

ROHS:

AINNX NO:

4971672-MMBFJ112

Description:

JFET N-CH 35V 0.35W SOT-23

Products specifications
  • Factory Lead Time
    42 Weeks
  • Lifecycle Status
    ACTIVE (Last Updated: 11 hours ago)
  • Package / Case
    TO-236-3, SC-59, SOT-23-3
  • Mounting Type
    Surface Mount
  • Mount
    Surface Mount
  • Contact Plating

    Contact plating (finish) provides corrosion protection for base metals and optimizes the mechanical and electrical properties of the contact interfaces.

    Tin
  • Number of Pins
    3
  • Weight
    30mg
  • Transistor Element Material
    SILICON
  • Number of Elements
    1
  • Breakdown Voltage / V
    -35V
  • Published
    2000
  • Packaging

    Semiconductor package is a carrier / shell used to contain and cover one or more semiconductor components or integrated circuits. The material of the shell can be metal, plastic, glass or ceramic.

    Tape & Reel (TR)
  • Operating Temperature

    The operating temperature is the range of ambient temperature within which a power supply, or any other electrical equipment, operate in. This ranges from a minimum operating temperature, to a peak or maximum operating temperature, outside which, the power supply may fail.

    -55°C~150°C TJ
  • JESD-609 Code
    e3
  • Pbfree Code
    yes
  • Part Status

    Parts can have many statuses as they progress through the configuration, analysis, review, and approval stages.

    Active
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Number of Terminations
    3
  • ECCN Code
    EAR99
  • Voltage - Rated DC
    35V
  • Max Power Dissipation

    The maximum power that the MOSFET can dissipate continuously under the specified thermal conditions.

    350mW
  • Terminal Position
    DUAL
  • Terminal Form

    Occurring at or forming the end of a series, succession, or the like; closing; concluding.

    GULL WING
  • Current Rating

    Current rating is the maximum current that a fuse will carry for an indefinite period without too much deterioration of the fuse element.

    5mA
  • Base Part Number
    MBFJ112
  • Number of Channels
    1
  • Element Configuration

    The distribution of electrons of an atom or molecule (or other physical structure) in atomic or molecular orbitals.

    Single
  • Operating Mode

    A phase of operation during the operation and maintenance stages of the life cycle of a facility.

    DEPLETION MODE
  • Power Dissipation

    the process by which an electronic or electrical device produces heat (energy loss or waste) as an undesirable derivative of its primary action.

    350mW
  • FET Type
    N-Channel
  • Transistor Application
    SWITCHING
  • Drain to Source Voltage (Vdss)
    35V
  • Continuous Drain Current (ID)
    5mA
  • Gate to Source Voltage (Vgs)
    -35V
  • FET Technology
    JUNCTION
  • Max Junction Temperature (Tj)
    150°C
  • Drain to Source Resistance
    50Ohm
  • Feedback Cap-Max (Crss)
    5 pF
  • Current - Drain (Idss) @ Vds (Vgs=0)
    5mA @ 15V
  • Voltage - Cutoff (VGS off) @ Id
    1V @ 1μA
  • Resistance - RDS(On)
    50Ohm
  • Width
    1.3mm
  • Length
    2.92mm
  • Height
    1.11mm
  • RoHS Status

    RoHS means “Restriction of Certain Hazardous Substances” in the “Hazardous Substances Directive” in electrical and electronic equipment.

    ROHS3 Compliant
  • Radiation Hardening

    Radiation hardening is the process of making electronic components and circuits resistant to damage or malfunction caused by high levels of ionizing radiation, especially for environments in outer space (especially beyond the low Earth orbit), around nuclear reactors and particle accelerators, or during nuclear accidents or nuclear warfare.

    No
  • REACH SVHC
    No SVHC
  • Lead Free
    Lead Free
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