MMBFJ310LT1G

ON Semiconductor MMBFJ310LT1G

Part No:

MMBFJ310LT1G

Manufacturer:

ON Semiconductor

Package:

TO-236-3, SC-59, SOT-23-3

ROHS:

AINNX NO:

6093343-MMBFJ310LT1G

Description:

ON SEMICONDUCTOR - MMBFJ310LT1G - TRANSISTOR, JFET, N, 25V, SOT-23

Products specifications
  • Factory Lead Time
    8 Weeks
  • Lifecycle Status
    ACTIVE (Last Updated: 1 day ago)
  • Surface Mount

    having leads that are designed to be soldered on the side of a circuit board that the body of the component is mounted on.

    YES
  • Package / Case
    TO-236-3, SC-59, SOT-23-3
  • Number of Pins
    3
  • Weight
    1.437803g
  • Number of Elements
    1
  • Breakdown Voltage / V
    25V
  • Usage Level
    Military grade
  • Published
    2000
  • Packaging

    Semiconductor package is a carrier / shell used to contain and cover one or more semiconductor components or integrated circuits. The material of the shell can be metal, plastic, glass or ceramic.

    Tape & Reel (TR)
  • JESD-609 Code
    e3
  • Pbfree Code
    yes
  • Part Status

    Parts can have many statuses as they progress through the configuration, analysis, review, and approval stages.

    Active
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Number of Terminations
    3
  • ECCN Code
    EAR99
  • Terminal Finish
    Tin (Sn)
  • Max Operating Temperature

    The Maximum Operating Temperature is the maximum body temperature at which the thermistor is designed to operate for extended periods of time with acceptable stability of its electrical characteristics.

    150°C
  • Min Operating Temperature
    -55°C
  • Voltage - Rated DC
    25V
  • Max Power Dissipation

    The maximum power that the MOSFET can dissipate continuously under the specified thermal conditions.

    225mW
  • Terminal Position
    DUAL
  • Terminal Form

    Occurring at or forming the end of a series, succession, or the like; closing; concluding.

    GULL WING
  • Peak Reflow Temperature (Cel)
    260
  • Current Rating

    Current rating is the maximum current that a fuse will carry for an indefinite period without too much deterioration of the fuse element.

    60mA
  • Time@Peak Reflow Temperature-Max (s)
    40
  • Base Part Number
    MMBFJ310
  • Pin Count

    a count of all of the component leads (or pins)

    3
  • Element Configuration

    The distribution of electrons of an atom or molecule (or other physical structure) in atomic or molecular orbitals.

    Single
  • Operating Mode

    A phase of operation during the operation and maintenance stages of the life cycle of a facility.

    DEPLETION MODE
  • Power Dissipation

    the process by which an electronic or electrical device produces heat (energy loss or waste) as an undesirable derivative of its primary action.

    225mW
  • Current - Test
    10mA
  • Transistor Application
    AMPLIFIER
  • Halogen Free
    Halogen Free
  • Drain to Source Voltage (Vdss)
    25V
  • Transistor Type
    N-Channel JFET
  • Continuous Drain Current (ID)
    60mA
  • Gate to Source Voltage (Vgs)
    25V
  • Gain
    12dB
  • FET Technology
    JUNCTION
  • Voltage - Test
    10V
  • Feedback Cap-Max (Crss)
    2.5 pF
  • Highest Frequency Band
    ULTRA HIGH FREQUENCY B
  • Width
    1.3mm
  • Length
    2.9mm
  • Height
    940μm
  • RoHS Status

    RoHS means “Restriction of Certain Hazardous Substances” in the “Hazardous Substances Directive” in electrical and electronic equipment.

    ROHS3 Compliant
  • Radiation Hardening

    Radiation hardening is the process of making electronic components and circuits resistant to damage or malfunction caused by high levels of ionizing radiation, especially for environments in outer space (especially beyond the low Earth orbit), around nuclear reactors and particle accelerators, or during nuclear accidents or nuclear warfare.

    No
  • REACH SVHC
    No SVHC
  • Lead Free
    Lead Free
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