Panasonic Electronic Components SC8673040L

Factory Lead Time

12 Weeks

Mount

Surface Mount

Mounting Type

Surface Mount

Package / Case

8-PowerSMD, Flat Leads

Number of Pins

8

Transistor Element Material

SILICON

Current - Continuous Drain (Id) @ 25℃

16A 46A

Number of Elements

2

Turn Off Delay Time

It is the time from when Vgs drops below 90% of the gate drive voltage to when the drain current drops below 90% of the load current. It is the delay before current starts to transition in the load, and depends on Rg. Ciss.

75 ns

Operating Temperature

The operating temperature is the range of ambient temperature within which a power supply, or any other electrical equipment, operate in. This ranges from a minimum operating temperature, to a peak or maximum operating temperature, outside which, the power supply may fail.

150°C TJ

Packaging

Semiconductor package is a carrier / shell used to contain and cover one or more semiconductor components or integrated circuits. The material of the shell can be metal, plastic, glass or ceramic.

Cut Tape (CT)

Part Status

Parts can have many statuses as they progress through the configuration, analysis, review, and approval stages.

Active

Moisture Sensitivity Level (MSL)

1 (Unlimited)

Number of Terminations

6

ECCN Code

EAR99

Max Power Dissipation

The maximum power that the MOSFET can dissipate continuously under the specified thermal conditions.

40W

Peak Reflow Temperature (Cel)

NOT SPECIFIED

Reach Compliance Code

unknown

Time@Peak Reflow Temperature-Max (s)

NOT SPECIFIED

JESD-30 Code

R-PDSO-F6

Element Configuration

The distribution of electrons of an atom or molecule (or other physical structure) in atomic or molecular orbitals.

Dual

Operating Mode

A phase of operation during the operation and maintenance stages of the life cycle of a facility.

DEPLETION MODE

Case Connection

DRAIN

Turn On Delay Time

Turn-on delay, td(on), is the time taken to charge the input capacitance of the device before drain current conduction can start.

18 ns

Power - Max

1.7W 2.5W

FET Type

2 N-Channel (Dual) Asymmetrical

Transistor Application

SWITCHING

Rds On (Max) @ Id, Vgs

10m Ω @ 8A, 10V

Vgs(th) (Max) @ Id

3V @ 5.85mA

Input Capacitance (Ciss) (Max) @ Vds

1092pF @ 10V

Gate Charge (Qg) (Max) @ Vgs

6.3nC @ 4.5V

Rise Time

In electronics, when describing a voltage or current step function, rise time is the time taken by a signal to change from a specified low value to a specified high value.

14ns

Drain to Source Voltage (Vdss)

30V

Fall Time (Typ)

11 ns

Continuous Drain Current (ID)

46A

Gate to Source Voltage (Vgs)

3V

Drain Current-Max (Abs) (ID)

10A

Drain-source On Resistance-Max

0.014Ohm

DS Breakdown Voltage-Min

30V

FET Technology

METAL-OXIDE SEMICONDUCTOR

FET Feature

Logic Level Gate

Height

950μm

Length

4.9mm

Width

5.9mm

RoHS Status

RoHS means “Restriction of Certain Hazardous Substances” in the “Hazardous Substances Directive” in electrical and electronic equipment.

RoHS Compliant