FF800R17KP4_B2

Power Integrations FF800R17KP4_B2

Part No:

FF800R17KP4_B2

Manufacturer:

Power Integrations

Datasheet:

-

Package:

-

AINNX NO:

49453783-FF800R17KP4_B2

Description:

IGBT Modules IGBT 1700V 800A

Products specifications
  • Surface Mount

    having leads that are designed to be soldered on the side of a circuit board that the body of the component is mounted on.

    NO
  • Number of Terminals
    10
  • Transistor Element Material
    SILICON
  • Package Description
    MODULE-10
  • Package Style
    FLANGE MOUNT
  • Moisture Sensitivity Levels
    1
  • Package Body Material
    UNSPECIFIED
  • Turn-on Time-Nom (ton)
    790 ns
  • Turn-off Time-Nom (toff)
    1650 ns
  • Reflow Temperature-Max (s)
    NOT SPECIFIED
  • Operating Temperature-Max
    175 °C
  • Rohs Code
    No
  • Manufacturer Part Number
    FF800R17KP4_B2
  • Package Shape
    RECTANGULAR
  • Manufacturer
    Infineon Technologies AG
  • Number of Elements
    2
  • Part Life Cycle Code
    Active
  • Ihs Manufacturer
    INFINEON TECHNOLOGIES AG
  • Risk Rank
    1.37
  • Part Package Code
    MODULE
  • Pbfree Code
    No
  • ECCN Code
    EAR99
  • Subcategory
    Insulated Gate BIP Transistors
  • Terminal Position
    UPPER
  • Terminal Form

    Occurring at or forming the end of a series, succession, or the like; closing; concluding.

    UNSPECIFIED
  • Peak Reflow Temperature (Cel)
    NOT SPECIFIED
  • Reach Compliance Code
    unknown
  • Pin Count

    a count of all of the component leads (or pins)

    10
  • JESD-30 Code
    R-XUFM-X10
  • Qualification Status

    An indicator of formal certification of qualifications.

    Not Qualified
  • Configuration
    SEPARATE, 2 ELEMENTS
  • Case Connection
    ISOLATED
  • Transistor Application
    POWER CONTROL
  • Polarity/Channel Type
    N-CHANNEL
  • Power Dissipation-Max (Abs)
    4850 W
  • Collector Current-Max (IC)
    1200 A
  • Collector-Emitter Voltage-Max
    1700 V
  • Gate-Emitter Voltage-Max
    20 V
  • VCEsat-Max
    2.2 V
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