Package / Case
SOIC
Number of Pins
16
EU RoHS
Compliant
ECCN (US)
EAR99
HTS
8541.10.00.80
Automotive
No
PPAP
No
Direction Type
Bi-Directional
Number of Elements per Chip
8
Maximum Working Voltage (V)
36
Maximum Clamping Voltage (V)
72
Maximum Leakage Current (uA)
2
Peak Pulse Power Dissipation (W)
500
Capacitance Value (pF)
15
Minimum Operating Temperature (°C)
-55
Maximum Operating Temperature (°C)
150
Mounting
Surface Mount
Package Height
1.5(Max)
Package Width
4(Max)
Package Length
10(Max)
PCB changed
16
Standard Package Name
SOP
Supplier Package
SOIC
Lead Shape
Gull-wing
Operating Temperature Max Deg. C
150C
Operating Temperature Classification
Military
Package Type
SOIC
Product Depth (mm)
4(mm)
Operating Temp Range
-55C to 150C
Reverse Stand-off Voltage
36 V
Mounting Styles
Surface Mount
Peak Pulse Power Dissipation
500 W
Number of Elements
8
Operating Temperature Min Deg. C
-55C
Rad Hardened
No
Test Current (It)
1 mA
Capacitance Value
15
Suppressor Type
TVS
Schedule B
8536300000
RoHS
Compliant
Packaging
Semiconductor package is a carrier / shell used to contain and cover one or more semiconductor components or integrated circuits. The material of the shell can be metal, plastic, glass or ceramic.
Tube
Part Status
Parts can have many statuses as they progress through the configuration, analysis, review, and approval stages.
Active
Type
TVS
Max Operating Temperature
The Maximum Operating Temperature is the maximum body temperature at which the thermistor is designed to operate for extended periods of time with acceptable stability of its electrical characteristics.
150 °C
Min Operating Temperature
-55 °C
Capacitance
15 pF
Depth
4 mm
Pin Count
a count of all of the component leads (or pins)
16
Working Voltage
36
Polarity
Bi-Directional
Configuration
Octal
Leakage Current
2
Power Dissipation
the process by which an electronic or electrical device produces heat (energy loss or waste) as an undesirable derivative of its primary action.
500 W
Clamping Voltage
72
Peak Pulse Current
The peak pulse power rating of a TVS diode is defined as the instantaneous power dissipated by a device for a given pulse condition, and is a measure of the power that is dissipated in the TVS junction during a given transient event.
7 A
Direction
Bidirectional
Reverse Breakdown Voltage
40 V
Leakage Current (Max)
0.002 uA
Min Breakdown Voltage
40 V
Product Length (mm)
10(mm)
Length
10 mm
Product Height (mm)
1.5(mm)
Radiation Hardening
Radiation hardening is the process of making electronic components and circuits resistant to damage or malfunction caused by high levels of ionizing radiation, especially for environments in outer space (especially beyond the low Earth orbit), around nuclear reactors and particle accelerators, or during nuclear accidents or nuclear warfare.
No
Lead Free
Lead Free