IRGP4063D-EPBF

Rochester Electronics IRGP4063D-EPBF

Part No:

IRGP4063D-EPBF

Datasheet:

-

Package:

-

AINNX NO:

50071070-IRGP4063D-EPBF

Description:

Trans IGBT Chip N-CH 600V 96A 330000mW 3-Pin(3+Tab) TO-247AC Tube

Products specifications
  • Mount
    Through Hole
  • Collector-Emitter Breakdown Voltage
    600 V
  • RoHS
    Compliant
  • Max Operating Temperature

    The Maximum Operating Temperature is the maximum body temperature at which the thermistor is designed to operate for extended periods of time with acceptable stability of its electrical characteristics.

    175 °C
  • Min Operating Temperature
    -55 °C
  • Max Power Dissipation

    The maximum power that the MOSFET can dissipate continuously under the specified thermal conditions.

    330 W
  • Element Configuration

    The distribution of electrons of an atom or molecule (or other physical structure) in atomic or molecular orbitals.

    Single
  • Power Dissipation

    the process by which an electronic or electrical device produces heat (energy loss or waste) as an undesirable derivative of its primary action.

    330 W
  • Collector Emitter Voltage (VCEO)
    2.14 V
  • Max Collector Current
    96 A
  • Reverse Recovery Time
    115 ns
  • Radiation Hardening

    Radiation hardening is the process of making electronic components and circuits resistant to damage or malfunction caused by high levels of ionizing radiation, especially for environments in outer space (especially beyond the low Earth orbit), around nuclear reactors and particle accelerators, or during nuclear accidents or nuclear warfare.

    No
  • Lead Free
    Lead Free
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