IRGR2B60KDTRLPBF

Rochester Electronics IRGR2B60KDTRLPBF

Part No:

IRGR2B60KDTRLPBF

Datasheet:

-

Package:

-

AINNX NO:

51838948-IRGR2B60KDTRLPBF

Description:

600V IGBT with UltraFast Soft Recovery Diode, DPAKCOPAK-3, RoHS

Products specifications
  • Lifecycle Status
    Obsolete (Last Updated: 2 years ago)
  • Mount
    Surface Mount
  • Number of Pins
    3
  • Package Quantity
    3000
  • Collector-Emitter Breakdown Voltage
    600 V
  • RoHS
    Compliant
  • Packaging

    Semiconductor package is a carrier / shell used to contain and cover one or more semiconductor components or integrated circuits. The material of the shell can be metal, plastic, glass or ceramic.

    Tape & Reel
  • Max Operating Temperature

    The Maximum Operating Temperature is the maximum body temperature at which the thermistor is designed to operate for extended periods of time with acceptable stability of its electrical characteristics.

    150 °C
  • Min Operating Temperature
    -55 °C
  • Max Power Dissipation

    The maximum power that the MOSFET can dissipate continuously under the specified thermal conditions.

    35 W
  • Element Configuration

    The distribution of electrons of an atom or molecule (or other physical structure) in atomic or molecular orbitals.

    Single
  • Power Dissipation

    the process by which an electronic or electrical device produces heat (energy loss or waste) as an undesirable derivative of its primary action.

    35 W
  • Collector Emitter Voltage (VCEO)
    2.25 V
  • Max Collector Current
    6.3 A
  • Reverse Recovery Time
    68 ns
  • Radiation Hardening

    Radiation hardening is the process of making electronic components and circuits resistant to damage or malfunction caused by high levels of ionizing radiation, especially for environments in outer space (especially beyond the low Earth orbit), around nuclear reactors and particle accelerators, or during nuclear accidents or nuclear warfare.

    No
0 Similar Products Remaining