DTC043ZEBTL

ROHM Semiconductor DTC043ZEBTL

Part No:

DTC043ZEBTL

Manufacturer:

ROHM Semiconductor

Package:

SC-89, SOT-490

ROHS:

AINNX NO:

7844854-DTC043ZEBTL

Description:

TRANS PREBIAS NPN 50V EMT3F

Products specifications
  • Factory Lead Time
    13 Weeks
  • Mount
    Surface Mount
  • Mounting Type
    Surface Mount
  • Package / Case
    SC-89, SOT-490
  • Number of Pins
    3
  • Collector-Emitter Breakdown Voltage
    50V
  • Number of Elements
    1
  • Packaging

    Semiconductor package is a carrier / shell used to contain and cover one or more semiconductor components or integrated circuits. The material of the shell can be metal, plastic, glass or ceramic.

    Tape & Reel (TR)
  • Published
    2015
  • Part Status

    Parts can have many statuses as they progress through the configuration, analysis, review, and approval stages.

    Active
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Number of Terminations
    3
  • ECCN Code
    EAR99
  • Max Operating Temperature

    The Maximum Operating Temperature is the maximum body temperature at which the thermistor is designed to operate for extended periods of time with acceptable stability of its electrical characteristics.

    150°C
  • Min Operating Temperature
    -55°C
  • Additional Feature

    Any Feature, including a modified Existing Feature, that is not an Existing Feature.

    BUILT IN BIAS RESISTANCE RATIO IS 10
  • Max Power Dissipation

    The maximum power that the MOSFET can dissipate continuously under the specified thermal conditions.

    150mW
  • Terminal Position
    DUAL
  • Terminal Form

    Occurring at or forming the end of a series, succession, or the like; closing; concluding.

    FLAT
  • Output Voltage
    50mV
  • Polarity
    NPN
  • Element Configuration

    The distribution of electrons of an atom or molecule (or other physical structure) in atomic or molecular orbitals.

    Single
  • Transistor Application
    SWITCHING
  • Transistor Type
    NPN - Pre-Biased
  • Collector Emitter Voltage (VCEO)
    150mV
  • Max Collector Current
    100mA
  • DC Current Gain (hFE) (Min) @ Ic, Vce
    80 @ 5mA 10V
  • Vce Saturation (Max) @ Ib, Ic
    150mV @ 500μA, 5mA
  • Max Frequency
    250MHz
  • Transition Frequency
    250MHz
  • Max Breakdown Voltage
    50V
  • Resistor - Base (R1)
    4.7 k Ω
  • Continuous Collector Current
    100mA
  • Resistor - Emitter Base (R2)
    47 k Ω
  • Radiation Hardening

    Radiation hardening is the process of making electronic components and circuits resistant to damage or malfunction caused by high levels of ionizing radiation, especially for environments in outer space (especially beyond the low Earth orbit), around nuclear reactors and particle accelerators, or during nuclear accidents or nuclear warfare.

    No
  • RoHS Status

    RoHS means “Restriction of Certain Hazardous Substances” in the “Hazardous Substances Directive” in electrical and electronic equipment.

    ROHS3 Compliant
  • Lead Free
    Lead Free
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