ROHM Semiconductor QS8M51TR

Factory Lead Time

20 Weeks

Mount

Surface Mount

Mounting Type

Surface Mount

Package / Case

8-SMD, Flat Lead

Number of Pins

8

Transistor Element Material

SILICON

Current - Continuous Drain (Id) @ 25℃

2A 1.5A

Number of Elements

2

Operating Temperature

The operating temperature is the range of ambient temperature within which a power supply, or any other electrical equipment, operate in. This ranges from a minimum operating temperature, to a peak or maximum operating temperature, outside which, the power supply may fail.

150°C TJ

Packaging

Semiconductor package is a carrier / shell used to contain and cover one or more semiconductor components or integrated circuits. The material of the shell can be metal, plastic, glass or ceramic.

Tape & Reel (TR)

Published

2015

Part Status

Parts can have many statuses as they progress through the configuration, analysis, review, and approval stages.

Active

Moisture Sensitivity Level (MSL)

1 (Unlimited)

Number of Terminations

8

ECCN Code

EAR99

Max Power Dissipation

The maximum power that the MOSFET can dissipate continuously under the specified thermal conditions.

1.5W

Terminal Position

DUAL

Base Part Number

*M51

Pin Count

a count of all of the component leads (or pins)

8

Configuration

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

Operating Mode

A phase of operation during the operation and maintenance stages of the life cycle of a facility.

ENHANCEMENT MODE

Turn On Delay Time

Turn-on delay, td(on), is the time taken to charge the input capacitance of the device before drain current conduction can start.

10 ns

FET Type

N and P-Channel

Transistor Application

SWITCHING

Rds On (Max) @ Id, Vgs

325m Ω @ 2A, 10V

Vgs(th) (Max) @ Id

2.5V @ 1mA

Input Capacitance (Ciss) (Max) @ Vds

290pF @ 25V

Gate Charge (Qg) (Max) @ Vgs

4.7nC @ 5V

Drain to Source Voltage (Vdss)

100V

Polarity/Channel Type

N-CHANNEL AND P-CHANNEL

Continuous Drain Current (ID)

1.5A

Gate to Source Voltage (Vgs)

20V

Drain Current-Max (Abs) (ID)

2A

Drain-source On Resistance-Max

0.355Ohm

Pulsed Drain Current-Max (IDM)

6A

DS Breakdown Voltage-Min

100V

FET Technology

METAL-OXIDE SEMICONDUCTOR

FET Feature

Logic Level Gate

Radiation Hardening

Radiation hardening is the process of making electronic components and circuits resistant to damage or malfunction caused by high levels of ionizing radiation, especially for environments in outer space (especially beyond the low Earth orbit), around nuclear reactors and particle accelerators, or during nuclear accidents or nuclear warfare.

No

RoHS Status

RoHS means “Restriction of Certain Hazardous Substances” in the “Hazardous Substances Directive” in electrical and electronic equipment.

ROHS3 Compliant

Lead Free

Lead Free