ROHM Semiconductor US6M11TR

Factory Lead Time

16 Weeks

Mount

Surface Mount

Mounting Type

Surface Mount

Package / Case

6-SMD, Flat Leads

Number of Pins

6

Transistor Element Material

SILICON

Current - Continuous Drain (Id) @ 25℃

1.5A 1.3A

Number of Elements

2

Turn Off Delay Time

It is the time from when Vgs drops below 90% of the gate drive voltage to when the drain current drops below 90% of the load current. It is the delay before current starts to transition in the load, and depends on Rg. Ciss.

30 ns

Operating Temperature

The operating temperature is the range of ambient temperature within which a power supply, or any other electrical equipment, operate in. This ranges from a minimum operating temperature, to a peak or maximum operating temperature, outside which, the power supply may fail.

150°C TJ

Packaging

Semiconductor package is a carrier / shell used to contain and cover one or more semiconductor components or integrated circuits. The material of the shell can be metal, plastic, glass or ceramic.

Tape & Reel (TR)

Published

2016

JESD-609 Code

e2

Pbfree Code

yes

Part Status

Parts can have many statuses as they progress through the configuration, analysis, review, and approval stages.

Active

Moisture Sensitivity Level (MSL)

1 (Unlimited)

Number of Terminations

6

ECCN Code

EAR99

Resistance

600MOhm

Terminal Finish

TIN COPPER

Max Power Dissipation

The maximum power that the MOSFET can dissipate continuously under the specified thermal conditions.

1W

Terminal Position

DUAL

Peak Reflow Temperature (Cel)

260

Time@Peak Reflow Temperature-Max (s)

10

Base Part Number

*M11

Pin Count

a count of all of the component leads (or pins)

6

Number of Channels

2

Operating Mode

A phase of operation during the operation and maintenance stages of the life cycle of a facility.

ENHANCEMENT MODE

Turn On Delay Time

Turn-on delay, td(on), is the time taken to charge the input capacitance of the device before drain current conduction can start.

8 ns

FET Type

N and P-Channel

Transistor Application

SWITCHING

Rds On (Max) @ Id, Vgs

180m Ω @ 1.5A, 4.5V

Vgs(th) (Max) @ Id

1V @ 1mA

Input Capacitance (Ciss) (Max) @ Vds

110pF @ 10V

Gate Charge (Qg) (Max) @ Vgs

1.8nC @ 4.5V

Rise Time

In electronics, when describing a voltage or current step function, rise time is the time taken by a signal to change from a specified low value to a specified high value.

10ns

Drain to Source Voltage (Vdss)

20V 12V

Polarity/Channel Type

N-CHANNEL AND P-CHANNEL

Fall Time (Typ)

9 ns

Continuous Drain Current (ID)

1.3A

Gate to Source Voltage (Vgs)

10V

Drain Current-Max (Abs) (ID)

1.5A

Drain to Source Breakdown Voltage

-12V

FET Technology

METAL-OXIDE SEMICONDUCTOR

FET Feature

Logic Level Gate

Radiation Hardening

Radiation hardening is the process of making electronic components and circuits resistant to damage or malfunction caused by high levels of ionizing radiation, especially for environments in outer space (especially beyond the low Earth orbit), around nuclear reactors and particle accelerators, or during nuclear accidents or nuclear warfare.

No

RoHS Status

RoHS means “Restriction of Certain Hazardous Substances” in the “Hazardous Substances Directive” in electrical and electronic equipment.

ROHS3 Compliant

Lead Free

Lead Free