D1002UK

Seme LAB D1002UK

Part No:

D1002UK

Manufacturer:

Seme LAB

Datasheet:

-

Package:

DA

AINNX NO:

46516854-D1002UK

Description:

N-Channel MOSFET, 10 A, 70 V, 4-Pin DA Semelab D1002UK

Products specifications
  • Mounting Type
    Screw Mount
  • Package / Case
    DA
  • Mount
    Panel
  • Surface Mount

    having leads that are designed to be soldered on the side of a circuit board that the body of the component is mounted on.

    YES
  • Number of Pins
    4
  • Number of Terminals
    4
  • Transistor Element Material
    SILICON
  • Number of Elements per Chip
    1
  • Package Type
    DA
  • Maximum Operating Temperature

    the maximum body temperature at which the thermistor is designed to operate for extended periods of time with acceptable stability of its electrical characteristics.

    +200 °C
  • Channel Mode
    Enhancement
  • Vds - Drain-Source Breakdown Voltage
    70 V
  • Vgs th - Gate-Source Threshold Voltage
    1 V to 7 V
  • Pd - Power Dissipation
    87 W
  • Transistor Polarity
    N-Channel
  • Vgs - Gate-Source Voltage
    20 V
  • Unit Weight
    0.381488 oz
  • Factory Pack QuantityFactory Pack Quantity
    25
  • Mounting Styles
    SMD/SMT
  • Manufacturer
    TT Electronics
  • Brand
    Semelab / TT Electronics
  • Id - Continuous Drain Current
    10 A
  • RoHS
    Compliant
  • Package Description
    FLANGE MOUNT, O-CRFM-F4
  • Package Style
    FLANGE MOUNT
  • Package Body Material
    CERAMIC, METAL-SEALED COFIRED
  • Reflow Temperature-Max (s)
    NOT SPECIFIED
  • Operating Temperature-Max
    200 °C
  • Rohs Code
    Yes
  • Manufacturer Part Number
    D1002UK
  • Package Shape
    ROUND
  • Number of Elements
    1
  • Part Life Cycle Code
    Active
  • Ihs Manufacturer
    SEMELAB LTD
  • Risk Rank
    5.05
  • Series
    TetraFET
  • JESD-609 Code
    e4
  • Pbfree Code
    No
  • ECCN Code
    EAR99
  • Type
    RF Power MOSFET
  • Terminal Finish
    GOLD
  • Max Operating Temperature

    The Maximum Operating Temperature is the maximum body temperature at which the thermistor is designed to operate for extended periods of time with acceptable stability of its electrical characteristics.

    200 °C
  • Additional Feature

    Any Feature, including a modified Existing Feature, that is not an Existing Feature.

    LOW NOISE
  • Subcategory
    MOSFETs
  • Max Power Dissipation

    The maximum power that the MOSFET can dissipate continuously under the specified thermal conditions.

    87 W
  • Technology
    Si
  • Terminal Position
    RADIAL
  • Terminal Form

    Occurring at or forming the end of a series, succession, or the like; closing; concluding.

    FLAT
  • Peak Reflow Temperature (Cel)
    NOT SPECIFIED
  • Reach Compliance Code
    compliant
  • Pin Count

    a count of all of the component leads (or pins)

    4
  • JESD-30 Code
    O-CRFM-F4
  • Qualification Status

    An indicator of formal certification of qualifications.

    Not Qualified
  • Operating Frequency

    Operating frequency is the frequency at which the communications are being made with the total bandwidth occupied by the carrier signal with modulation. Usually bandwidth of the antenna will be wider than the bandwidth of the signal so that more than one center frequency the antenna can be put in to effective use.

    175 MHz
  • Configuration
    Single
  • Element Configuration

    The distribution of electrons of an atom or molecule (or other physical structure) in atomic or molecular orbitals.

    Single
  • Operating Mode

    A phase of operation during the operation and maintenance stages of the life cycle of a facility.

    ENHANCEMENT MODE
  • Case Connection
    SOURCE
  • Output Power

    That power available at a specified output of a device under specified conditions of operation.

    40 W
  • Transistor Application
    AMPLIFIER
  • Polarity/Channel Type
    N-CHANNEL
  • Product Type

    a group of products which fulfill a similar need for a market segment or market as a whole.

    RF MOSFET Transistors
  • Transistor Type
    DMOS FET
  • Continuous Drain Current (ID)
    10 A
  • Gate to Source Voltage (Vgs)
    20 V
  • Gain
    16 dB
  • Input Capacitance

    The capacitance between the input terminals of an op amp with either input grounded. It is expressed in units of farads.

    120 pF
  • DS Breakdown Voltage-Min
    70 V
  • Channel Type
    N
  • FET Technology
    METAL-OXIDE SEMICONDUCTOR
  • Highest Frequency Band
    ULTRA HIGH FREQUENCY BAND
  • Product Category

    a particular group of related products.

    RF MOSFET Transistors
  • Width
    9.52mm
  • Height
    6.6mm
  • Length
    24.76mm
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