D1013UK

Seme LAB D1013UK

Part No:

D1013UK

Manufacturer:

Seme LAB

Datasheet:

-

Package:

-

AINNX NO:

46520177-D1013UK

Description:

N-Channel MOSFET, 5 A, 70 V, 3-Pin DP Semelab D1013UK

Products specifications
  • Mounting Type
    Screw Mount
  • Surface Mount

    having leads that are designed to be soldered on the side of a circuit board that the body of the component is mounted on.

    YES
  • Number of Terminals
    2
  • Transistor Element Material
    SILICON
  • Number of Elements per Chip
    1
  • Package Type
    DP
  • Maximum Operating Temperature

    the maximum body temperature at which the thermistor is designed to operate for extended periods of time with acceptable stability of its electrical characteristics.

    +200 °C
  • Channel Mode
    Enhancement
  • Package Description
    FLANGE MOUNT, R-CDFM-F2
  • Package Style
    FLANGE MOUNT
  • Package Body Material
    CERAMIC, METAL-SEALED COFIRED
  • Reflow Temperature-Max (s)
    NOT SPECIFIED
  • Operating Temperature-Max
    200 °C
  • Rohs Code
    No
  • Manufacturer Part Number
    D1013UK
  • Package Shape
    RECTANGULAR
  • Manufacturer
    TT Electronics Power and Hybrid / Semelab Limited
  • Number of Elements
    1
  • Part Life Cycle Code
    Active
  • Ihs Manufacturer
    SEMELAB LTD
  • Risk Rank
    5.08
  • Series
    TetraFET
  • Pbfree Code
    No
  • ECCN Code
    EAR99
  • Additional Feature

    Any Feature, including a modified Existing Feature, that is not an Existing Feature.

    LOW NOISE
  • Terminal Position
    DUAL
  • Terminal Form

    Occurring at or forming the end of a series, succession, or the like; closing; concluding.

    FLAT
  • Peak Reflow Temperature (Cel)
    NOT SPECIFIED
  • Reach Compliance Code
    compliant
  • Pin Count

    a count of all of the component leads (or pins)

    3
  • JESD-30 Code
    R-CDFM-F2
  • Qualification Status

    An indicator of formal certification of qualifications.

    Not Qualified
  • Configuration
    SINGLE
  • Operating Mode

    A phase of operation during the operation and maintenance stages of the life cycle of a facility.

    ENHANCEMENT MODE
  • Case Connection
    SOURCE
  • Transistor Application
    AMPLIFIER
  • Polarity/Channel Type
    N-CHANNEL
  • DS Breakdown Voltage-Min
    70 V
  • Channel Type
    N
  • FET Technology
    METAL-OXIDE SEMICONDUCTOR
  • Highest Frequency Band
    ULTRA HIGH FREQUENCY BAND
  • Width
    6.35mm
  • Height
    5.08mm
  • Length
    18.92mm
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