STGP19NC60KD

STMicroelectronics STGP19NC60KD

Part No:

STGP19NC60KD

Manufacturer:

STMicroelectronics

Datasheet:

STGx19NC60KD

Package:

TO-220-3

ROHS:

AINNX NO:

5838707-STGP19NC60KD

Description:

Trans IGBT Chip N-CH 600V 35A 3-Pin(3+Tab) TO-220 T/R

Products specifications
  • Lifecycle Status
    ACTIVE (Last Updated: 8 months ago)
  • Factory Lead Time
    8 Weeks
  • Contact Plating

    Contact plating (finish) provides corrosion protection for base metals and optimizes the mechanical and electrical properties of the contact interfaces.

    Tin
  • Mount
    Through Hole
  • Mounting Type
    Through Hole
  • Package / Case
    TO-220-3
  • Weight
    6.000006g
  • Transistor Element Material
    SILICON
  • Collector-Emitter Breakdown Voltage
    600V
  • Number of Elements
    1
  • Test Conditions
    480V, 12A, 10 Ω, 15V
  • Turn Off Delay Time

    It is the time from when Vgs drops below 90% of the gate drive voltage to when the drain current drops below 90% of the load current. It is the delay before current starts to transition in the load, and depends on Rg. Ciss.

    105 ns
  • Operating Temperature

    The operating temperature is the range of ambient temperature within which a power supply, or any other electrical equipment, operate in. This ranges from a minimum operating temperature, to a peak or maximum operating temperature, outside which, the power supply may fail.

    -55°C~150°C TJ
  • Packaging

    Semiconductor package is a carrier / shell used to contain and cover one or more semiconductor components or integrated circuits. The material of the shell can be metal, plastic, glass or ceramic.

    Tube
  • Series
    PowerMESH™
  • Part Status

    Parts can have many statuses as they progress through the configuration, analysis, review, and approval stages.

    Active
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Number of Terminations
    3
  • ECCN Code
    EAR99
  • Max Power Dissipation

    The maximum power that the MOSFET can dissipate continuously under the specified thermal conditions.

    125W
  • Base Part Number
    STGP19
  • Pin Count

    a count of all of the component leads (or pins)

    3
  • JESD-30 Code
    R-PSFM-T3
  • Element Configuration

    The distribution of electrons of an atom or molecule (or other physical structure) in atomic or molecular orbitals.

    Single
  • Input Type
    Standard
  • Turn On Delay Time

    Turn-on delay, td(on), is the time taken to charge the input capacitance of the device before drain current conduction can start.

    30 ns
  • Power - Max
    125W
  • Transistor Application
    POWER CONTROL
  • Polarity/Channel Type
    N-CHANNEL
  • Collector Emitter Voltage (VCEO)
    600V
  • Max Collector Current
    35A
  • Reverse Recovery Time
    31 ns
  • JEDEC-95 Code
    TO-220AB
  • Turn On Time

    The time that it takes a gate circuit to allow a current to reach its full value.

    38 ns
  • Vce(on) (Max) @ Vge, Ic
    2.75V @ 15V, 12A
  • Turn Off Time-Nom (toff)
    270 ns
  • Gate Charge

    the amount of charge that needs to be injected into the gate electrode to turn ON (drive) the MOSFET.

    55nC
  • Current - Collector Pulsed (Icm)
    75A
  • Td (on/off) @ 25°C
    30ns/105ns
  • Switching Energy
    165μJ (on), 255μJ (off)
  • Gate-Emitter Voltage-Max
    20V
  • Gate-Emitter Thr Voltage-Max
    6.5V
  • Height
    9.15mm
  • Length
    10.4mm
  • Width
    4.6mm
  • Radiation Hardening

    Radiation hardening is the process of making electronic components and circuits resistant to damage or malfunction caused by high levels of ionizing radiation, especially for environments in outer space (especially beyond the low Earth orbit), around nuclear reactors and particle accelerators, or during nuclear accidents or nuclear warfare.

    No
  • RoHS Status

    RoHS means “Restriction of Certain Hazardous Substances” in the “Hazardous Substances Directive” in electrical and electronic equipment.

    ROHS3 Compliant
  • Lead Free
    Lead Free
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