STMicroelectronics STL65DN3LLH5

Lifecycle Status

OBSOLETE (Last Updated: 7 months ago)

Mount

Surface Mount

Mounting Type

Surface Mount

Package / Case

8-PowerVDFN

Number of Pins

8

Transistor Element Material

SILICON

Memory Types

FLASH

Number of Elements

2

Watchdog Timers

Yes

Operating Temperature

The operating temperature is the range of ambient temperature within which a power supply, or any other electrical equipment, operate in. This ranges from a minimum operating temperature, to a peak or maximum operating temperature, outside which, the power supply may fail.

-55°C~150°C TJ

Packaging

Semiconductor package is a carrier / shell used to contain and cover one or more semiconductor components or integrated circuits. The material of the shell can be metal, plastic, glass or ceramic.

Tape & Reel (TR)

Series

STripFET™ V

JESD-609 Code

e3

Part Status

Parts can have many statuses as they progress through the configuration, analysis, review, and approval stages.

Obsolete

Moisture Sensitivity Level (MSL)

1 (Unlimited)

Number of Terminations

6

ECCN Code

EAR99

Resistance

6.5MOhm

Terminal Finish

Matte Tin (Sn)

Max Power Dissipation

The maximum power that the MOSFET can dissipate continuously under the specified thermal conditions.

60W

Peak Reflow Temperature (Cel)

260

Time@Peak Reflow Temperature-Max (s)

30

Base Part Number

STL65

Pin Count

a count of all of the component leads (or pins)

8

JESD-30 Code

R-PDSO-N6

Interface

CAN, I2C, I2S, SPI, UART, USART, USB

Memory Size

The memory capacity is the amount of data a device can store at any given time in its memory.

768kB

Element Configuration

The distribution of electrons of an atom or molecule (or other physical structure) in atomic or molecular orbitals.

Dual

RAM Size

132kB

Operating Mode

A phase of operation during the operation and maintenance stages of the life cycle of a facility.

ENHANCEMENT MODE

Power Dissipation

the process by which an electronic or electrical device produces heat (energy loss or waste) as an undesirable derivative of its primary action.

60W

Case Connection

DRAIN

Data Bus Width

32b

FET Type

2 N-Channel (Dual)

Transistor Application

SWITCHING

Rds On (Max) @ Id, Vgs

6.5m Ω @ 9.5A, 10V

Vgs(th) (Max) @ Id

1.5V @ 250μA

Input Capacitance (Ciss) (Max) @ Vds

1500pF @ 25V

Gate Charge (Qg) (Max) @ Vgs

12nC @ 4.5V

Number of Timers/Counters

14

Continuous Drain Current (ID)

65A

Gate to Source Voltage (Vgs)

22V

Core Architecture

ARM

Max Frequency

120MHz

Drain Current-Max (Abs) (ID)

19A

Drain to Source Breakdown Voltage

30V

Pulsed Drain Current-Max (IDM)

76A

Number of Programmable I/O

114

FET Technology

METAL-OXIDE SEMICONDUCTOR

FET Feature

Logic Level Gate

Radiation Hardening

Radiation hardening is the process of making electronic components and circuits resistant to damage or malfunction caused by high levels of ionizing radiation, especially for environments in outer space (especially beyond the low Earth orbit), around nuclear reactors and particle accelerators, or during nuclear accidents or nuclear warfare.

No

RoHS Status

RoHS means “Restriction of Certain Hazardous Substances” in the “Hazardous Substances Directive” in electrical and electronic equipment.

ROHS3 Compliant

Lead Free

Lead Free