STS8DN6LF6AG

STMicroelectronics STS8DN6LF6AG

Part No:

STS8DN6LF6AG

Manufacturer:

STMicroelectronics

Package:

8-SOIC (0.154, 3.90mm Width)

ROHS:

AINNX NO:

6376703-STS8DN6LF6AG

Description:

MOSFET 2 N-CHANNEL 60V 8A 8SO

Products specifications
  • Lifecycle Status
    ACTIVE (Last Updated: 8 months ago)
  • Factory Lead Time
    20 Weeks
  • Mounting Type
    Surface Mount
  • Package / Case
    8-SOIC (0.154, 3.90mm Width)
  • Surface Mount

    having leads that are designed to be soldered on the side of a circuit board that the body of the component is mounted on.

    YES
  • Transistor Element Material
    SILICON
  • Current - Continuous Drain (Id) @ 25℃
    8A Ta
  • Number of Elements
    2
  • Operating Temperature

    The operating temperature is the range of ambient temperature within which a power supply, or any other electrical equipment, operate in. This ranges from a minimum operating temperature, to a peak or maximum operating temperature, outside which, the power supply may fail.

    -55°C~175°C TJ
  • Packaging

    Semiconductor package is a carrier / shell used to contain and cover one or more semiconductor components or integrated circuits. The material of the shell can be metal, plastic, glass or ceramic.

    Tape & Reel (TR)
  • Series
    Automotive, AEC-Q101, STripFET™ F6
  • Part Status

    Parts can have many statuses as they progress through the configuration, analysis, review, and approval stages.

    Active
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Number of Terminations
    8
  • Terminal Form

    Occurring at or forming the end of a series, succession, or the like; closing; concluding.

    GULL WING
  • Peak Reflow Temperature (Cel)
    NOT SPECIFIED
  • Time@Peak Reflow Temperature-Max (s)
    NOT SPECIFIED
  • Base Part Number
    STS8DN
  • JESD-30 Code
    R-PDSO-G8
  • Configuration
    SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
  • Operating Mode

    A phase of operation during the operation and maintenance stages of the life cycle of a facility.

    ENHANCEMENT MODE
  • Power - Max
    3.2W
  • FET Type
    2 N-Channel (Dual)
  • Transistor Application
    SWITCHING
  • Rds On (Max) @ Id, Vgs
    24m Ω @ 4A, 10V
  • Vgs(th) (Max) @ Id
    2.5V @ 250μA
  • Input Capacitance (Ciss) (Max) @ Vds
    1340pF @ 25V
  • Gate Charge (Qg) (Max) @ Vgs
    27nC @ 10V
  • Drain to Source Voltage (Vdss)
    60V
  • Drain Current-Max (Abs) (ID)
    8A
  • Drain-source On Resistance-Max
    0.026Ohm
  • Pulsed Drain Current-Max (IDM)
    32A
  • DS Breakdown Voltage-Min
    60V
  • Avalanche Energy Rating (Eas)
    72 mJ
  • FET Technology
    METAL-OXIDE SEMICONDUCTOR
  • Power Dissipation-Max (Abs)
    3.2W
  • FET Feature
    Logic Level Gate
  • RoHS Status

    RoHS means “Restriction of Certain Hazardous Substances” in the “Hazardous Substances Directive” in electrical and electronic equipment.

    ROHS3 Compliant
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